Thermally induced diffusion in GaInNAs/GaAs and GaInAs/GaAs quantum wells grown by solid source molecular beam epitaxy

T. K. Ng; H. S. Djie; S. F. Yoon; T. Mei

doi:10.1063/1.1825632

Thermally induced diffusion in GaInNAs/GaAs and GaInAs/GaAs quantum wells grown by solid source molecular beam epitaxy

T. K. Ng^*, H. S. Djie, S. F. Yoon, T. Mei

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAsGaInAsGaAsGaInNAsGaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that predicts the changes in the QW confining potential with group-III atomic diffusion, have been used to obtain the values for diffusion coefficient. The activation energies of GaInAsGaAs QW (ED,GIA) were found to be between 0.49 to 0.51 eV, while that of GaInNAsGaAs QW (ED,GINA) showed comparable values of between 0.6 to a 0.67 eV, as annealing time increases from 10 to 30 s. The ED,GIA and ED,GINA values are attributed to the same interstitial diffusion mechanism.

Original language	English (US)
Article number	013506
Journal	Journal of Applied Physics
Volume	97
Issue number	1
DOIs	https://doi.org/10.1063/1.1825632
State	Published - Jan 1 2005
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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@article{17c2893e139e4ac3b8435c1d3bd42ec6,

title = "Thermally induced diffusion in GaInNAs/GaAs and GaInAs/GaAs quantum wells grown by solid source molecular beam epitaxy",

abstract = "The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAsGaInAsGaAsGaInNAsGaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that predicts the changes in the QW confining potential with group-III atomic diffusion, have been used to obtain the values for diffusion coefficient. The activation energies of GaInAsGaAs QW (ED,GIA) were found to be between 0.49 to 0.51 eV, while that of GaInNAsGaAs QW (ED,GINA) showed comparable values of between 0.6 to a 0.67 eV, as annealing time increases from 10 to 30 s. The ED,GIA and ED,GINA values are attributed to the same interstitial diffusion mechanism.",

author = "Ng, {T. K.} and Djie, {H. S.} and Yoon, {S. F.} and T. Mei",

year = "2005",

month = jan,

day = "1",

doi = "10.1063/1.1825632",

language = "English (US)",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "1",

}

TY - JOUR

T1 - Thermally induced diffusion in GaInNAs/GaAs and GaInAs/GaAs quantum wells grown by solid source molecular beam epitaxy

AU - Ng, T. K.

AU - Djie, H. S.

AU - Yoon, S. F.

AU - Mei, T.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAsGaInAsGaAsGaInNAsGaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that predicts the changes in the QW confining potential with group-III atomic diffusion, have been used to obtain the values for diffusion coefficient. The activation energies of GaInAsGaAs QW (ED,GIA) were found to be between 0.49 to 0.51 eV, while that of GaInNAsGaAs QW (ED,GINA) showed comparable values of between 0.6 to a 0.67 eV, as annealing time increases from 10 to 30 s. The ED,GIA and ED,GINA values are attributed to the same interstitial diffusion mechanism.

AB - The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAsGaInAsGaAsGaInNAsGaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that predicts the changes in the QW confining potential with group-III atomic diffusion, have been used to obtain the values for diffusion coefficient. The activation energies of GaInAsGaAs QW (ED,GIA) were found to be between 0.49 to 0.51 eV, while that of GaInNAsGaAs QW (ED,GINA) showed comparable values of between 0.6 to a 0.67 eV, as annealing time increases from 10 to 30 s. The ED,GIA and ED,GINA values are attributed to the same interstitial diffusion mechanism.

UR - http://www.scopus.com/inward/record.url?scp=19944433510&partnerID=8YFLogxK

U2 - 10.1063/1.1825632

DO - 10.1063/1.1825632

M3 - Article

AN - SCOPUS:19944433510

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 013506

ER -

Thermally induced diffusion in GaInNAs/GaAs and GaInAs/GaAs quantum wells grown by solid source molecular beam epitaxy

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