Abstract
The thermal stability dependence on states for multi-state magnetic random access memory (MRAM) was examined. In order to investigate the thermal stability, samples with structure of Ta2nm/ NiFe2nm/ CoFe1nm/ NiFe2nm/ IrMn4nm/ Ta5nm were sputtered using the UHV sputtering system. The results showed that thermal stability was different for different annealing temperatures which means MRAM thermal stability was different for different heating currents.
| Original language | English (US) |
|---|---|
| Pages (from-to) | ED10 |
| Journal | Digests of the Intermag Conference |
| State | Published - 2003 |
| Externally published | Yes |
| Event | Intermag 2003: International Magnetics Conference - Boston, MA, United States Duration: Mar 28 2003 → Apr 3 2003 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering