Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

Aftab M. Hussain; Hossain M. Fahad; Galo T. Sevilla; Muhammad Mustafa Hussain

doi:10.1002/pssr.201308019

Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

Aftab M. Hussain, Hossain M. Fahad, Galo T. Sevilla, Muhammad Mustafa Hussain

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	966-970
Number of pages	5
Journal	physica status solidi (RRL) - Rapid Research Letters
Volume	7
Issue number	11
DOIs	https://doi.org/10.1002/pssr.201308019
State	Published - Aug 16 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008
Acknowledgements: This work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1002/pssr.201308019

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@article{c6225bcdbdc748e89bf3c480fd897600,

title = "Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)",

abstract = "We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. {\textcopyright} 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Hussain, {Aftab M.} and Fahad, {Hossain M.} and Sevilla, {Galo T.} and Hussain, {Muhammad Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008 Acknowledgements: This work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).",

year = "2013",

month = aug,

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doi = "10.1002/pssr.201308019",

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T1 - Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

AU - Hussain, Aftab M.

AU - Fahad, Hossain M.

AU - Sevilla, Galo T.

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008 Acknowledgements: This work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).

PY - 2013/8/16

Y1 - 2013/8/16

N2 - We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - http://hdl.handle.net/10754/562910

UR - http://doi.wiley.com/10.1002/pssr.201308019

UR - http://www.scopus.com/inward/record.url?scp=84888009448&partnerID=8YFLogxK

U2 - 10.1002/pssr.201308019

DO - 10.1002/pssr.201308019

M3 - Article

SN - 1862-6254

VL - 7

SP - 966

EP - 970

JO - physica status solidi (RRL) - Rapid Research Letters

JF - physica status solidi (RRL) - Rapid Research Letters

IS - 11

ER -

Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

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