Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Seung Kyu Oh; James Spencer Lundh; Shahab Shervin; Bikramjit Chatterjee; Dong Kyu Lee; Sukwon Choi; Joon Seop Kwak; Jae-Hyun Ryou

doi:10.1115/1.4041813

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Seung Kyu Oh, James Spencer Lundh, Shahab Shervin, Bikramjit Chatterjee, Dong Kyu Lee, Sukwon Choi, Joon Seop Kwak, Jae-Hyun Ryou

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

Original language	English (US)
Journal	Journal of Electronic Packaging
Volume	141
Issue number	2
DOIs	https://doi.org/10.1115/1.4041813
State	Published - Feb 25 2019
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2021-03-12
Acknowledged KAUST grant number(s): OSR-2017-CRG6-3437.02
Acknowledgements: The work at the University of Houston is supported by the IT R&D Program of Korean Ministry of Trade, Industry, and Energy (MOTIE)/Korea Evaluation Institute of Technology (KEIT) (Grant No. 10048933, Development of Epitaxial Structure Design and Epitaxial Growth System for High-Voltage Power Semiconductors) and King Abdullah University of Science and Technology (KAUST) (Contract No. OSR-2017-CRG6-3437.02). J.H.R. also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH). The work at SCNU was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF- 2014R1A6A1030419) and the Korea Evaluation Institute of Industrial Technology, Development of Core Technologies for Transportation Systems funded by the Ministry of Trade, Industry and Energy (10070201, Development of Smart Head Lamp of VGA resolution using Micro-LED). Funding for efforts by the Pennsylvania State University was provided by the AFOSR Young Investigator Program (Grant No. FA9550-17-1-0141, Program Officers: Dr. Michael Kendra and Dr. Brett Pokines, also monitored by Dr. Kenneth Goretta).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Mechanics of Materials
Electronic, Optical and Magnetic Materials
Computer Science Applications
Electrical and Electronic Engineering

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title = "Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications",

abstract = "GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.",

author = "Oh, {Seung Kyu} and Lundh, {James Spencer} and Shahab Shervin and Bikramjit Chatterjee and Lee, {Dong Kyu} and Sukwon Choi and Kwak, {Joon Seop} and Jae-Hyun Ryou",

note = "KAUST Repository Item: Exported on 2021-03-12 Acknowledged KAUST grant number(s): OSR-2017-CRG6-3437.02 Acknowledgements: The work at the University of Houston is supported by the IT R&D Program of Korean Ministry of Trade, Industry, and Energy (MOTIE)/Korea Evaluation Institute of Technology (KEIT) (Grant No. 10048933, Development of Epitaxial Structure Design and Epitaxial Growth System for High-Voltage Power Semiconductors) and King Abdullah University of Science and Technology (KAUST) (Contract No. OSR-2017-CRG6-3437.02). J.H.R. also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH). The work at SCNU was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF- 2014R1A6A1030419) and the Korea Evaluation Institute of Industrial Technology, Development of Core Technologies for Transportation Systems funded by the Ministry of Trade, Industry and Energy (10070201, Development of Smart Head Lamp of VGA resolution using Micro-LED). Funding for efforts by the Pennsylvania State University was provided by the AFOSR Young Investigator Program (Grant No. FA9550-17-1-0141, Program Officers: Dr. Michael Kendra and Dr. Brett Pokines, also monitored by Dr. Kenneth Goretta). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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AU - Oh, Seung Kyu

AU - Lundh, James Spencer

AU - Shervin, Shahab

AU - Chatterjee, Bikramjit

AU - Lee, Dong Kyu

AU - Choi, Sukwon

AU - Kwak, Joon Seop

AU - Ryou, Jae-Hyun

N1 - KAUST Repository Item: Exported on 2021-03-12 Acknowledged KAUST grant number(s): OSR-2017-CRG6-3437.02 Acknowledgements: The work at the University of Houston is supported by the IT R&D Program of Korean Ministry of Trade, Industry, and Energy (MOTIE)/Korea Evaluation Institute of Technology (KEIT) (Grant No. 10048933, Development of Epitaxial Structure Design and Epitaxial Growth System for High-Voltage Power Semiconductors) and King Abdullah University of Science and Technology (KAUST) (Contract No. OSR-2017-CRG6-3437.02). J.H.R. also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH). The work at SCNU was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF- 2014R1A6A1030419) and the Korea Evaluation Institute of Industrial Technology, Development of Core Technologies for Transportation Systems funded by the Ministry of Trade, Industry and Energy (10070201, Development of Smart Head Lamp of VGA resolution using Micro-LED). Funding for efforts by the Pennsylvania State University was provided by the AFOSR Young Investigator Program (Grant No. FA9550-17-1-0141, Program Officers: Dr. Michael Kendra and Dr. Brett Pokines, also monitored by Dr. Kenneth Goretta). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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N2 - GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

AB - GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

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Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Abstract

Bibliographical note

ASJC Scopus subject areas

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