Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/sapphire by 3ω method

Hua Tong*, Jing Zhang, Hongping Zhao, Guangyu Liu, Vincent A. Handara, Juan A. Herbsommer, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


The thermal conductivity of high-quality narrow-bandgap (0.77eV) InN grown on GaN on sapphire substrate by pulsed- MOVPE method was measured and analyzed. To accurately extract the thermal conductivities of GaN and InN films grown on sapphire substrate, 2D multilayer thermal diffusion model and extended 3ω slope technique are employed. The thermal conductivity of sapphire substrate measured is 41 W/(mK). The thermal conductivity of undoped GaN film is measured as 108 W/(mK). High-quality pulsed-MOVPE grown InN film exhibits thermal conductivity of 126 W/(mK), which is higher in comparison to the previously-reported value of porous InN ceramics 45 W/(mK), yet lower than the theoretical value 176 W/(mK) based on phonon scattering.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices V
StatePublished - May 7 2010
EventGallium Nitride Materials and Devices V - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherGallium Nitride Materials and Devices V
Country/TerritoryUnited States
CitySan Francisco, CA


  • 3ω method
  • Extended slope technique
  • GaN
  • InN
  • Pulsed-MOVPE
  • Thermal conductivity
  • Thermoelectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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