Abstract
The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
Original language | English (US) |
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Title of host publication | IEEE Photonics Conference 2012 |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 921-922 |
Number of pages | 2 |
ISBN (Print) | 978-1-4577-0731-5 |
DOIs | |
State | Published - Dec 1 2012 |