Thermal Annealing induced relaxation of compressive strain in porous GaN structures

Ahmed Ben Slimane, Adel Najar, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
Original languageEnglish (US)
Title of host publicationIEEE Photonics Conference 2012
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Print)978-1-4577-0731-5
StatePublished - Dec 1 2012

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