Theoretical Analysis of Dielectric Assisted Tamm Mode Excitation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


In this paper, a dielectric material assisted excitation mechanism is proposed to confine Tamm Modes at the dielectric-air interface. The performance analysis of proposed structure is performed using transfer matrix method (TMM). The design comprises a bilayer one-dimensional photonic crystal structure having a top defect layer. The defect layer thickness, and incident angles are optimized to confirm the Tamm mode confinement at an operating wavelength of 632.8nm. The proposed structure shows a strong Tamm mode localization for a defect layer thickness of 210nm. Whereas an evanescent Tamm mode is also excited for a lower defect layer thickness of around 170nm.
Original languageEnglish (US)
Title of host publication2022 IEEE 22nd International Conference on Nanotechnology (NANO)
Number of pages4
ISBN (Print)978-1-6654-5226-7
StatePublished - Nov 8 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-12-26


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