The study of electrical characteristics of heterojunction based on ZnO nanowires using ultrahigh-vacuum conducting atomic force microscopy

Jr-Hau He*, C. H. Ho

*Corresponding author for this work

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The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0-2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor (2) was obtained. It elucidates that a ZnO-Si p-n junction can be modeled by a series of diodes, the actual ZnO-Si junction diode and two Schottky diodes at the metal/ZnO and metal/Si junctions. The tunneling across p-n junction would also play a role in the externally measured high ideality factor.

Original languageEnglish (US)
Article number233105
JournalApplied Physics Letters
Issue number23
StatePublished - Dec 14 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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