The study of electrical characteristics of heterojunction based on ZnO nanowires using ultrahigh-vacuum conducting atomic force microscopy

J. H. He; C. H. Ho

doi:10.1063/1.2821831

The study of electrical characteristics of heterojunction based on ZnO nanowires using ultrahigh-vacuum conducting atomic force microscopy

J. H. He^*, C. H. Ho

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0-2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor (2) was obtained. It elucidates that a ZnO-Si p-n junction can be modeled by a series of diodes, the actual ZnO-Si junction diode and two Schottky diodes at the metal/ZnO and metal/Si junctions. The tunneling across p-n junction would also play a role in the externally measured high ideality factor.

Original language	English (US)
Article number	233105
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2821831
State	Published - 2007
Externally published	Yes

Bibliographical note

Funding Information:
The research was supported by the National Science Council under Grant No. NSC 96-2112-M-002-038-MY3 and NSC 96-2622-M-002-002-CC3.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "The study of electrical characteristics of heterojunction based on ZnO nanowires using ultrahigh-vacuum conducting atomic force microscopy",

abstract = "The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0-2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor (2) was obtained. It elucidates that a ZnO-Si p-n junction can be modeled by a series of diodes, the actual ZnO-Si junction diode and two Schottky diodes at the metal/ZnO and metal/Si junctions. The tunneling across p-n junction would also play a role in the externally measured high ideality factor.",

author = "He, {J. H.} and Ho, {C. H.}",

note = "Funding Information: The research was supported by the National Science Council under Grant No. NSC 96-2112-M-002-038-MY3 and NSC 96-2622-M-002-002-CC3. ",

year = "2007",

doi = "10.1063/1.2821831",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

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AU - He, J. H.

AU - Ho, C. H.

N1 - Funding Information: The research was supported by the National Science Council under Grant No. NSC 96-2112-M-002-038-MY3 and NSC 96-2622-M-002-002-CC3.

PY - 2007

Y1 - 2007

N2 - The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0-2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor (2) was obtained. It elucidates that a ZnO-Si p-n junction can be modeled by a series of diodes, the actual ZnO-Si junction diode and two Schottky diodes at the metal/ZnO and metal/Si junctions. The tunneling across p-n junction would also play a role in the externally measured high ideality factor.

AB - The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0-2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor (2) was obtained. It elucidates that a ZnO-Si p-n junction can be modeled by a series of diodes, the actual ZnO-Si junction diode and two Schottky diodes at the metal/ZnO and metal/Si junctions. The tunneling across p-n junction would also play a role in the externally measured high ideality factor.

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DO - 10.1063/1.2821831

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VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233105

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The study of electrical characteristics of heterojunction based on ZnO nanowires using ultrahigh-vacuum conducting atomic force microscopy

Abstract

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