The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing

Keyphrases

• Crystal Quality 100%
• Sapphire 100%
• Semi-polar 100%
• M-plane 100%
• High-temperature Annealing 100%
• Structural Evolution 100%
• Sputtering Temperature 100%
• Annealing 66%
• Epitaxy 66%
• Crystalline Structure 33%
• Zigzag 33%
• Film Thickness 33%
• Annealing Process 33%
• Semiconductor Lasers 33%
• Raman Spectra 33%
• Lattice Parameter 33%
• Microcavity Structure 33%
• Epitaxial 33%
• Quality Parameters 33%
• Sapphire Substrate 33%
• Crystal Morphology 33%
• AlN Template 33%
• Morphological Evolution 33%
• Nitride Semiconductors 33%
• Annealing Duration 33%
• Crystal Lattice 33%
• Crystalline Evolution 33%
• Laser Device 33%
• Systematic Measurement 33%
• Annealing Treatment 33%

Material Science

• Annealing 100%
• Aluminum Nitride 100%
• Sapphire 100%
• Crystalline Material 100%
• Epitaxy 40%
• Film Thickness 20%
• Lattice Constant 20%
• Nitride Semiconductor 20%
• Semiconductor Laser 20%
• X-Ray Diffraction 20%
• Crystal Structure 20%