The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing

Fabi Zhang, Jin Zhang, Lijie Huang, Shangfeng Liu, Wei Luo, Junjie Kang, Zhiwen Liang, Jiakang Cao, Chenhui Zhang, Qi Wang, Ye Yuan

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this work, the epitaxial semipolar (11-22) AlN was prepared on nonpolar m-sapphire substrate by combining sputtering and high-temperature annealing. According to our systematic measurements and analysis from XRD, Raman spectra, and AFM, the evolution of crystalline structure and morphology was investigated upon increasing AlN thickness and annealing duration. The annealing operation intensively resets the lattice and improves the crystalline quality. By varying the film thickness, the contribution from the AlN-sapphire interface on crystalline quality and lattice parameters during the annealing process was investigated, and its contribution was found to be not so obvious when the thickness increased from 300 nm to 1000 nm. When the annealing was performed under durations from 1 to 5 h, the crystalline quality was found unchanged; meanwhile, the evolution of morphology was pronounced, and it means the crystalline reorganization happens prior to morphology reset. Finally, the annealing treatment enabled a zig-zag morphology on the AlN template along the sapphire [0001] direction in the plane, which potentially affects the subsequent device epitaxy process. Therefore, our results act as important experience for the semipolar nitride semiconductor laser device preparation, particularly for the epitaxy of microcavity structure through providing the crystalline evolution.
Original languageEnglish (US)
Pages (from-to)2945
JournalMaterials (Basel, Switzerland)
Issue number8
StatePublished - Apr 18 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-04-26
Acknowledgements: This work was partly supported by the National Key R&D Program of China (No. 2021YFA0716400). This work was supported by the Guangdong Basic and Application Basic Research Foundation of Guangdong Province (Nos. 2021A1515111149, 2020A1515110891, 2019B1515120091 and 2019B1515120081). The author Fabi Zhang was sponsored by the Guangxi Scholarship Fund of Guangxi Education Department.

ASJC Scopus subject areas

  • General Materials Science


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