Abstract
A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original language | English (US) |
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Pages (from-to) | 7445-7450 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 45 |
DOIs | |
State | Published - Oct 13 2015 |