The metallic interface between the two band insulators LaGaO3 and SrTiO3

Safdar Nazir; Udo Schwingenschlögl; Nirpendra Singh

doi:10.1063/1.3604020

The metallic interface between the two band insulators LaGaO3 and SrTiO3

Safdar Nazir, Udo Schwingenschlögl, Nirpendra Singh

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

Original language	English (US)
Pages (from-to)	262104
Journal	Applied Physics Letters
Volume	98
Issue number	26
DOIs	https://doi.org/10.1063/1.3604020
State	Published - Jun 29 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3604020

https://repository.kaust.edu.sa/bitstream/10754/315685/1/The%20metallic%20interface%20between%20the%20two%20band%20insulators%20LaGaO3%20and%20SrTiO3.pdf

Cite this

@article{f73da46dd86d458c8ae3b54870052a6e,

title = "The metallic interface between the two band insulators LaGaO3 and SrTiO3",

abstract = "The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.",

author = "Safdar Nazir and Udo Schwingenschl{\"o}gl and Nirpendra Singh",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2011",

month = jun,

day = "29",

doi = "10.1063/1.3604020",

language = "English (US)",

volume = "98",

pages = "262104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - The metallic interface between the two band insulators LaGaO3 and SrTiO3

AU - Nazir, Safdar

AU - Schwingenschlögl, Udo

AU - Singh, Nirpendra

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2011/6/29

Y1 - 2011/6/29

N2 - The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

AB - The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

UR - http://hdl.handle.net/10754/315685

UR - http://scitation.aip.org/content/aip/journal/apl/98/26/10.1063/1.3604020

UR - http://www.scopus.com/inward/record.url?scp=79960103758&partnerID=8YFLogxK

U2 - 10.1063/1.3604020

DO - 10.1063/1.3604020

M3 - Article

SN - 0003-6951

VL - 98

SP - 262104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

The metallic interface between the two band insulators LaGaO3 and SrTiO3

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this