The metallic interface between the two band insulators LaGaO3 and SrTiO3

Safdar Nazir, Udo Schwingenschlögl, Nirpendra Singh

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.
Original languageEnglish (US)
Pages (from-to)262104
JournalApplied Physics Letters
Issue number26
StatePublished - Jun 29 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this