The mean inner potential of GaN measured from nanowires using off-axis electron holography

Andrew S W Wong; Ghim W. Ho; Rafal Dunin-Borkowski; Takeshi Kasama; Rachel A. Oliver; Pedro M F J Costa; Colin J. Humphreys

The mean inner potential of GaN measured from nanowires using off-axis electron holography

Andrew S W Wong^*, Ghim W. Ho, Rafal Dunin-Borkowski, Takeshi Kasama, Rachel A. Oliver, Pedro M F J Costa, Colin J. Humphreys

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7± 0.3) V is obtained from these samples.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Pages	209-214
Number of pages	6
Volume	892
State	Published - 2006
Externally published	Yes
Event	2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Other

Other	2005 Materials Research Society Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{b160699a62e44de1a9fefdc197e82ebb,

title = "The mean inner potential of GaN measured from nanowires using off-axis electron holography",

abstract = "The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7± 0.3) V is obtained from these samples.",

author = "Wong, {Andrew S W} and Ho, {Ghim W.} and Rafal Dunin-Borkowski and Takeshi Kasama and Oliver, {Rachel A.} and Costa, {Pedro M F J} and Humphreys, {Colin J.}",

year = "2006",

language = "English (US)",

isbn = "1558998462",

volume = "892",

pages = "209--214",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",

}

TY - GEN

T1 - The mean inner potential of GaN measured from nanowires using off-axis electron holography

AU - Wong, Andrew S W

AU - Ho, Ghim W.

AU - Dunin-Borkowski, Rafal

AU - Kasama, Takeshi

AU - Oliver, Rachel A.

AU - Costa, Pedro M F J

AU - Humphreys, Colin J.

PY - 2006

Y1 - 2006

N2 - The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7± 0.3) V is obtained from these samples.

AB - The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7± 0.3) V is obtained from these samples.

UR - http://www.scopus.com/inward/record.url?scp=33646431985&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33646431985

SN - 1558998462

SN - 9781558998469

VL - 892

SP - 209

EP - 214

BT - Materials Research Society Symposium Proceedings

T2 - 2005 Materials Research Society Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

The mean inner potential of GaN measured from nanowires using off-axis electron holography

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this