Abstract
In this paper, we report the largest bandgap blueshift of 320meV (~105nm) novel quantum well intermixing (QWI) technique in the InGaP/AlInGaP single quantum-well laser structure. We applied external compressive strain using a thick SiO2 cap with a thickness = of 1000 nm, annealed at 950°C for the number of cycles from 30-240s of annealing duration to enhance the QWI process. Using this method, wavelength tunability over a range of 640nm to 545nm (320meV) was demonstrated. The emission around ~545nm is the first demonstration of the photoluminescence in the green emission region on InGaP/InAlGaP QW structures.
Original language | English (US) |
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Title of host publication | 2020 11th IEEE Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON) |
Publisher | IEEE |
Pages | 0833-0836 |
Number of pages | 4 |
ISBN (Print) | 9781728196565 |
DOIs | |
State | Published - Dec 25 2020 |
Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2022-07-01Acknowledgements: The author gratefully acknowledges the financial support from KACST Technology Innovation Center for Solid-State Lighting at KAUST and Research Consultancy Institute (RCI) at Effat University. The author thanks Prof Boon Ooi for all the support in fabrication and characterization.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.