@inproceedings{2aac1504021545708a8bf7368376747e,
title = "The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride",
abstract = "Bulk and surface passivating properties of low frequency direct PECVD SiNx:H were investigated on 0.5-1 Ωcm p-type mc-Si material. It is observed that bulk passivation is preserved for different SiNx:H layers, deposited in a wide range of gas flow ratio and power. This allows optimisation of the layer composition towards rear surface passivation of mc-Si, while maintaining the bulk passivation. Lifetime measurements showed that a thermal treatment of SiNx:H leads to a lower minority carrier trapping density in the mc-Si bulk. Also a strong effect of the surface condition on the surface passivation was found. Different surface conditions have a strong impact on blister formation, which are possibly related to the diffusion mechanism of hydrogen from SiNx:H into the mc-Si bulk.",
author = "Dekkers, {H. F.W.} and F. Duerinckx and {De Wolf}, S. and G. Agostinelli and J. Szlufcik",
year = "2003",
language = "English (US)",
isbn = "4990181603",
series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",
pages = "1143--1146",
editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",
booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",
note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",
}