The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride

H. F.W. Dekkers*, F. Duerinckx, Stefaan De Wolf, G. Agostinelli, J. Szlufcik

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Bulk and surface passivating properties of low frequency direct PECVD SiNx:H were investigated on 0.5-1 Ωcm p-type mc-Si material. It is observed that bulk passivation is preserved for different SiNx:H layers, deposited in a wide range of gas flow ratio and power. This allows optimisation of the layer composition towards rear surface passivation of mc-Si, while maintaining the bulk passivation. Lifetime measurements showed that a thermal treatment of SiNx:H leads to a lower minority carrier trapping density in the mc-Si bulk. Also a strong effect of the surface condition on the surface passivation was found. Different surface conditions have a strong impact on blister formation, which are possibly related to the diffusion mechanism of hydrogen from SiNx:H into the mc-Si bulk.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1143-1146
Number of pages4
StatePublished - Dec 1 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeB

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period05/11/0305/18/03

ASJC Scopus subject areas

  • Engineering(all)

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