The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

Mohammed Zahed Mustafa Khan, Tien Khee Ng, Udo Schwingenschlögl, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.
Original languageEnglish (US)
Title of host publication7th International Symposium on High-capacity Optical Networks and Enabling Technologies
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages3
ISBN (Print)9781424499243
StatePublished - Dec 2010

Cite this