The influence of nonequilibrium distribution on room-temperature lasing spectra in quantum-dash lasers

C. L. Tan; H. S. Djie; Y. Wang; C. E. Dimas; V. Hongpinyo; Y. H. Ding; B. S. Ooi

doi:10.1109/LPT.2008.2008197

The influence of nonequilibrium distribution on room-temperature lasing spectra in quantum-dash lasers

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, B. S. Ooi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.

Original language	English (US)
Pages (from-to)	30-32
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2008.2008197
State	Published - 2009

Keywords

Nonequilibrium distribution
Quantum-dash (Qdash)
Quantum-dot (QD)
Supercontinuum broadband laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2008.2008197

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@article{be8330fd0b6347c9acbad2b7eb8525f4,

title = "The influence of nonequilibrium distribution on room-temperature lasing spectra in quantum-dash lasers",

abstract = "We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.",

keywords = "Nonequilibrium distribution, Quantum-dash (Qdash), Quantum-dot (QD), Supercontinuum broadband laser",

author = "Tan, {C. L.} and Djie, {H. S.} and Y. Wang and Dimas, {C. E.} and V. Hongpinyo and Ding, {Y. H.} and Ooi, {B. S.}",

year = "2009",

doi = "10.1109/LPT.2008.2008197",

language = "English (US)",

volume = "21",

pages = "30--32",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "1",

}

TY - JOUR

T1 - The influence of nonequilibrium distribution on room-temperature lasing spectra in quantum-dash lasers

AU - Tan, C. L.

AU - Djie, H. S.

AU - Wang, Y.

AU - Dimas, C. E.

AU - Hongpinyo, V.

AU - Ding, Y. H.

AU - Ooi, B. S.

PY - 2009

Y1 - 2009

N2 - We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.

AB - We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.

KW - Nonequilibrium distribution

KW - Quantum-dash (Qdash)

KW - Quantum-dot (QD)

KW - Supercontinuum broadband laser

UR - http://www.scopus.com/inward/record.url?scp=72549114576&partnerID=8YFLogxK

U2 - 10.1109/LPT.2008.2008197

DO - 10.1109/LPT.2008.2008197

M3 - Article

AN - SCOPUS:72549114576

SN - 1041-1135

VL - 21

SP - 30

EP - 32

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 1

ER -

The influence of nonequilibrium distribution on room-temperature lasing spectra in quantum-dash lasers

Abstract

Keywords

ASJC Scopus subject areas

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