Abstract
Macroscopic crystals were used to obtain an in-depth characterization of the electronic and in-gap properties of methylammonium lead iodide (MAPbI 3. The process was started with a compositional and optical investigation that confirmed the quality of the material. The band diagram of the semiconductor with particular attention to its surface properties was determined experimentally, which was fundamental for the applications. The mobility and diffusion length of both electrons and holes were directly measured, along with the concentration and type of the charge carriers.
Original language | English (US) |
---|---|
Pages (from-to) | 3406-3410 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 28 |
Issue number | 17 |
DOIs | |
State | Published - Mar 2 2016 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: The authors thank Prof. Gennaro (Rino) Conte for the valuable discussions. This publication is based in part on the work supported by Award KUS-11-009-21 made by King Abdullah University of Science and Technology (KAUST), the Ontario Research Fund-Research Excellence Program, and the Natural Sciences and Engineering Research Council (NSERC) of Canada.