The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors

Youngsuk Jung; R. Joseph Kline; Eric K. Lin; Daniel A. Fischer; Michael F. Toney; Martin Heeney; Iain McCulloch; Dean M. DeLongchamp

doi:10.1149/1.2908623

The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors

Youngsuk Jung, R. Joseph Kline, Eric K. Lin, Daniel A. Fischer, Michael F. Toney, Martin Heeney, Iain McCulloch, Dean M. DeLongchamp

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-bjthiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTTs high performance can develop well on certain dielectrics, but can be disrupted on others.

Original language	English (US)
Title of host publication	ECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Pages	113-122
Number of pages	10
Volume	13
Edition	2
DOIs	https://doi.org/10.1149/1.2908623
State	Published - 2008
Externally published	Yes
Event	3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States Duration: May 18 2008 → May 22 2008

Other

Other	3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
Country/Territory	United States
City	Phoenix, AZ
Period	05/18/08 → 05/22/08

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2908623

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Jung, Y., Joseph Kline, R., Lin, E. K., Fischer, D. A., Toney, M. F., Heeney, M., McCulloch, I., & DeLongchamp, D. M. (2008). The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing (2 ed., Vol. 13, pp. 113-122) https://doi.org/10.1149/1.2908623

Jung, Youngsuk ; Joseph Kline, R. ; Lin, Eric K. ; Fischer, Daniel A. ; Toney, Michael F. ; Heeney, Martin ; McCulloch, Iain ; DeLongchamp, Dean M. / The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors. ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. Vol. 13 2. ed. 2008. pp. 113-122

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title = "The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors",

abstract = "The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-bjthiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTTs high performance can develop well on certain dielectrics, but can be disrupted on others.",

author = "Youngsuk Jung and {Joseph Kline}, R. and Lin, {Eric K.} and Fischer, {Daniel A.} and Toney, {Michael F.} and Martin Heeney and Iain McCulloch and DeLongchamp, {Dean M.}",

year = "2008",

doi = "10.1149/1.2908623",

language = "English (US)",

isbn = "9781566776271",

volume = "13",

pages = "113--122",

booktitle = "ECS Transactions - Dielectrics for Nanosystems 3",

edition = "2",

note = "3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting ; Conference date: 18-05-2008 Through 22-05-2008",

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Jung, Y, Joseph Kline, R, Lin, EK, Fischer, DA, Toney, MF, Heeney, M, McCulloch, I & DeLongchamp, DM 2008, The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors. in ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, vol. 13, pp. 113-122, 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting, Phoenix, AZ, United States, 05/18/08. https://doi.org/10.1149/1.2908623

The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors. / Jung, Youngsuk; Joseph Kline, R.; Lin, Eric K.; Fischer, Daniel A.; Toney, Michael F.; Heeney, Martin; McCulloch, Iain; DeLongchamp, Dean M.

ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. Vol. 13 2. ed. 2008. p. 113-122.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-bjthiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTTs high performance can develop well on certain dielectrics, but can be disrupted on others.

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Jung Y, Joseph Kline R, Lin EK, Fischer DA, Toney MF, Heeney M et al. The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 ed. Vol. 13. 2008. p. 113-122 https://doi.org/10.1149/1.2908623

The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors

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