IMPATT diodes were designed and fabricated in standard CMOS technology to study the impact of the RMS value of surface roughness on the avalanche frequency. By comparing the on-chip measurements of an IMPATT diode integrated in a CPW to an integrated one with a microstrip patch antenna at the same biasing conditions, the results demonstrated a reduction in the avalanche frequency in the antenna integrated structure by 34% compared to the CPW one. Such variation is strongly associated with the increase in the conduction losses by 40%~80% based on the biasing conditions and hence the avalanche frequency.
|Original language||English (US)|
|Title of host publication||2019 International Applied Computational Electromagnetics Society Symposium (ACES)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|State||Published - May 13 2019|