The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

Kornelius Tetzner*, Ivan Isakov, Anna Regoutz, David J. Payne, Thomas D. Anthopoulos

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.

Original languageEnglish (US)
Pages (from-to)59-64
Number of pages6
JournalJOURNAL OF MATERIALS CHEMISTRY C
Volume5
Issue number1
DOIs
StatePublished - 2017

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry.

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry

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