The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

Kornelius Tetzner; Ivan Isakov; Anna Regoutz; David J. Payne; Thomas D. Anthopoulos

doi:10.1039/c6tc04907a

The impact of post-deposition annealing on the performance of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors

Kornelius Tetzner^*, Ivan Isakov, Anna Regoutz, David J. Payne, Thomas D. Anthopoulos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors.

Original language	English (US)
Pages (from-to)	59-64
Number of pages	6
Journal	JOURNAL OF MATERIALS CHEMISTRY C
Volume	5
Issue number	1
DOIs	https://doi.org/10.1039/c6tc04907a
State	Published - 2017

Bibliographical note

Funding Information:
This work was funded by the People Programme (Marie Curie Actions) of the European Union's Framework Programme Horizon2020: “Flexible Complementary Hybrid Integrated Circuits” (FlexCHIC), grant agreement no. 658563. A. R. and D. J. P. acknowledge support from the EPSRC (EP/K004913/1 and EP/J021199/1). D. J. P. acknowledges support from the Royal Society (UF100105).

Publisher Copyright:
© The Royal Society of Chemistry.

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

Access to Document

10.1039/c6tc04907a

Cite this

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title = "The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors",

abstract = "We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.",

author = "Kornelius Tetzner and Ivan Isakov and Anna Regoutz and Payne, {David J.} and Anthopoulos, {Thomas D.}",

note = "Funding Information: This work was funded by the People Programme (Marie Curie Actions) of the European Union's Framework Programme Horizon2020: “Flexible Complementary Hybrid Integrated Circuits” (FlexCHIC), grant agreement no. 658563. A. R. and D. J. P. acknowledge support from the EPSRC (EP/K004913/1 and EP/J021199/1). D. J. P. acknowledges support from the Royal Society (UF100105). Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

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AU - Tetzner, Kornelius

AU - Isakov, Ivan

AU - Regoutz, Anna

AU - Payne, David J.

AU - Anthopoulos, Thomas D.

N1 - Funding Information: This work was funded by the People Programme (Marie Curie Actions) of the European Union's Framework Programme Horizon2020: “Flexible Complementary Hybrid Integrated Circuits” (FlexCHIC), grant agreement no. 658563. A. R. and D. J. P. acknowledge support from the EPSRC (EP/K004913/1 and EP/J021199/1). D. J. P. acknowledges support from the Royal Society (UF100105). Publisher Copyright: © The Royal Society of Chemistry.

PY - 2017

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N2 - We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.

AB - We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.

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DO - 10.1039/c6tc04907a

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