We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.
Bibliographical noteFunding Information:
This work was funded by the People Programme (Marie Curie Actions) of the European Union's Framework Programme Horizon2020: “Flexible Complementary Hybrid Integrated Circuits” (FlexCHIC), grant agreement no. 658563. A. R. and D. J. P. acknowledge support from the EPSRC (EP/K004913/1 and EP/J021199/1). D. J. P. acknowledges support from the Royal Society (UF100105).
© The Royal Society of Chemistry.
ASJC Scopus subject areas
- Materials Chemistry