Abstract
We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.
Original language | English (US) |
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Pages (from-to) | 59-64 |
Number of pages | 6 |
Journal | JOURNAL OF MATERIALS CHEMISTRY C |
Volume | 5 |
Issue number | 1 |
DOIs | |
State | Published - 2017 |
Bibliographical note
Publisher Copyright:© The Royal Society of Chemistry.
ASJC Scopus subject areas
- General Chemistry
- Materials Chemistry