The Impact of N2 Anneal on Laser Processed Silicon

Lujia Xu*, Klaus Weber, Xinbo Yang, Andreas Fell, Evan Franklin

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


In this paper, the impact of the N2 anneal on laser processed silicon was investigated using photoluminescence (PL) imaging through comparing the PL signal of laser processed samples before and after N2 anneal. The samples capped with different dielectrics or without any dielectric (bare surface) prior to the laser processing were used, enabling the evaluation of the influence of the N2 anneal on the defects caused both by laser thermal effect and by the existence of dielectrics. Generally, it was found that N2 anneal is an effective way to reduce both the laser and dielectric induced defects.

Original languageEnglish (US)
Pages (from-to)759-765
Number of pages7
JournalEnergy Procedia
StatePublished - Jan 1 2015
Event5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany
Duration: Mar 25 2015Mar 27 2015


  • Laser doping
  • N anneal
  • dielectric film

ASJC Scopus subject areas

  • General Energy


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