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The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE
Yaxin Wang*, Rika Shimma, Tomohiro Yamamoto, Hideki Hayashi, Ken Ichi Shiohama, Kaori Kurihara, Ryuichi Hasegawa, Kazuhiro Ohkawa
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
23
Scopus
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