The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE

Yaxin Wang; Rika Shimma; Tomohiro Yamamoto; Hideki Hayashi; Ken Ichi Shiohama; Kaori Kurihara; Ryuichi Hasegawa; Kazuhiro Ohkawa

doi:10.1016/j.jcrysgro.2015.01.028

The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE

Yaxin Wang^*, Rika Shimma, Tomohiro Yamamoto, Hideki Hayashi, Ken Ichi Shiohama, Kaori Kurihara, Ryuichi Hasegawa, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The relationship between In incorporation in InGaN/GaN quantum wells (QWs) and the plane orientation was investigated by using eight different GaN substrates, including non-polar, semi-polar and polar planes. Applying simultaneous metalorganic vapor-phase epitaxial (MOVPE) growth, a series of InGaN-based LEDs was fabricated on various planar GaN substrates and variations in In content in QWs, surface morphology and electroluminescence peak wavelength were examined. Samples made with the semi-polar (112¯2) plane and the polar (0001) plane had the high In contents, while specimens incorporating the non-polar (101¯0) plane had the low In content. The In content was most readily increased in the QWs produced using (112¯2), (0001), (101¯1) and (101¯0) planes, and the surface morphologies of samples made on the (0001), (112¯2), (202¯1) and (202¯1¯) planes were smoother than those of samples fabricated on the other planes.

Original language	English (US)
Pages (from-to)	164-168
Number of pages	5
Journal	Journal of Crystal Growth
Volume	416
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.01.028
State	Published - Apr 15 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 Published by Elsevier B.V.

Keywords

A2. Quantum wells
A3. Metalorganic vapor phase epitaxy
B1. Alloys
B1. Nitride
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2015.01.028

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title = "The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE",

abstract = "The relationship between In incorporation in InGaN/GaN quantum wells (QWs) and the plane orientation was investigated by using eight different GaN substrates, including non-polar, semi-polar and polar planes. Applying simultaneous metalorganic vapor-phase epitaxial (MOVPE) growth, a series of InGaN-based LEDs was fabricated on various planar GaN substrates and variations in In content in QWs, surface morphology and electroluminescence peak wavelength were examined. Samples made with the semi-polar (112¯2) plane and the polar (0001) plane had the high In contents, while specimens incorporating the non-polar (101¯0) plane had the low In content. The In content was most readily increased in the QWs produced using (112¯2), (0001), (101¯1) and (101¯0) planes, and the surface morphologies of samples made on the (0001), (112¯2), (202¯1) and (202¯1¯) planes were smoother than those of samples fabricated on the other planes.",

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author = "Yaxin Wang and Rika Shimma and Tomohiro Yamamoto and Hideki Hayashi and Shiohama, {Ken Ichi} and Kaori Kurihara and Ryuichi Hasegawa and Kazuhiro Ohkawa",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier B.V.",

year = "2015",

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day = "15",

doi = "10.1016/j.jcrysgro.2015.01.028",

language = "English (US)",

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AU - Wang, Yaxin

AU - Shimma, Rika

AU - Yamamoto, Tomohiro

AU - Hayashi, Hideki

AU - Shiohama, Ken Ichi

AU - Kurihara, Kaori

AU - Hasegawa, Ryuichi

AU - Ohkawa, Kazuhiro

PY - 2015/4/15

Y1 - 2015/4/15

N2 - The relationship between In incorporation in InGaN/GaN quantum wells (QWs) and the plane orientation was investigated by using eight different GaN substrates, including non-polar, semi-polar and polar planes. Applying simultaneous metalorganic vapor-phase epitaxial (MOVPE) growth, a series of InGaN-based LEDs was fabricated on various planar GaN substrates and variations in In content in QWs, surface morphology and electroluminescence peak wavelength were examined. Samples made with the semi-polar (112¯2) plane and the polar (0001) plane had the high In contents, while specimens incorporating the non-polar (101¯0) plane had the low In content. The In content was most readily increased in the QWs produced using (112¯2), (0001), (101¯1) and (101¯0) planes, and the surface morphologies of samples made on the (0001), (112¯2), (202¯1) and (202¯1¯) planes were smoother than those of samples fabricated on the other planes.

AB - The relationship between In incorporation in InGaN/GaN quantum wells (QWs) and the plane orientation was investigated by using eight different GaN substrates, including non-polar, semi-polar and polar planes. Applying simultaneous metalorganic vapor-phase epitaxial (MOVPE) growth, a series of InGaN-based LEDs was fabricated on various planar GaN substrates and variations in In content in QWs, surface morphology and electroluminescence peak wavelength were examined. Samples made with the semi-polar (112¯2) plane and the polar (0001) plane had the high In contents, while specimens incorporating the non-polar (101¯0) plane had the low In content. The In content was most readily increased in the QWs produced using (112¯2), (0001), (101¯1) and (101¯0) planes, and the surface morphologies of samples made on the (0001), (112¯2), (202¯1) and (202¯1¯) planes were smoother than those of samples fabricated on the other planes.

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KW - B1. Nitride

KW - B2. Semiconducting III-V materials

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ER -

The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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