The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure

Cheeloon Tan; Hery Susanto Djie; C. K. Tan; V. Hongpinyo; Yunhsiang Ding; Boon S. Ooi

doi:10.1109/LEOS.2009.5343093

The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure

Cheeloon Tan, Hery Susanto Djie, C. K. Tan, V. Hongpinyo, Yunhsiang Ding, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission. © 2009 IEEE.

Original language	English (US)
Title of host publication	2009 IEEE LEOS Annual Meeting Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	147-148
Number of pages	2
ISBN (Print)	9781424436804
DOIs	https://doi.org/10.1109/LEOS.2009.5343093
State	Published - Oct 2009

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KAUST Repository Item: Exported on 2020-10-01

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10.1109/LEOS.2009.5343093

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@inproceedings{0372d75ccb8b4e9e95a9cb0f3e555fe7,

title = "The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure",

abstract = "We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission. {\textcopyright} 2009 IEEE.",

author = "Cheeloon Tan and Djie, {Hery Susanto} and Tan, {C. K.} and V. Hongpinyo and Yunhsiang Ding and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2009",

month = oct,

doi = "10.1109/LEOS.2009.5343093",

language = "English (US)",

isbn = "9781424436804",

pages = "147--148",

booktitle = "2009 IEEE LEOS Annual Meeting Conference Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure. / Tan, Cheeloon; Djie, Hery Susanto; Tan, C. K. et al.
2009 IEEE LEOS Annual Meeting Conference Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 2009. p. 147-148.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure

AU - Tan, Cheeloon

AU - Djie, Hery Susanto

AU - Tan, C. K.

AU - Hongpinyo, V.

AU - Ding, Yunhsiang

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2009/10

Y1 - 2009/10

N2 - We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission. © 2009 IEEE.

AB - We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission. © 2009 IEEE.

UR - http://hdl.handle.net/10754/564239

UR - http://ieeexplore.ieee.org/document/5343093/

UR - http://www.scopus.com/inward/record.url?scp=72549095707&partnerID=8YFLogxK

U2 - 10.1109/LEOS.2009.5343093

DO - 10.1109/LEOS.2009.5343093

M3 - Conference contribution

SN - 9781424436804

SP - 147

EP - 148

BT - 2009 IEEE LEOS Annual Meeting Conference Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure

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