The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Xinbo Yang*, K. Fujiwara, N. V. Abrosimov, R. Gotoh, J. Nozawa, H. Koizumi, A. Kwasniewski, S. Uda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interface morphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.

Original languageEnglish (US)
Article number141601
JournalApplied Physics Letters
Issue number14
StatePublished - Apr 2 2012
Externally publishedYes

Bibliographical note

Funding Information:
Xinbo Yang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for financial support. This work was partially funded by the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers.”

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals'. Together they form a unique fingerprint.

Cite this