The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Xinbo Yang; K. Fujiwara; N. V. Abrosimov; R. Gotoh; J. Nozawa; H. Koizumi; A. Kwasniewski; S. Uda

doi:10.1063/1.3698336

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Xinbo Yang^*, K. Fujiwara, N. V. Abrosimov, R. Gotoh, J. Nozawa, H. Koizumi, A. Kwasniewski, S. Uda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V _c) for the interface morphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V _c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.

Original language	English (US)
Article number	141601
Journal	Applied Physics Letters
Volume	100
Issue number	14
DOIs	https://doi.org/10.1063/1.3698336
State	Published - Apr 2 2012
Externally published	Yes

Bibliographical note

Funding Information:
Xinbo Yang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for financial support. This work was partially funded by the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers.”

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3698336

Cite this

@article{9113fc825c6e4b12bb5948a1d6c2846b,

title = "The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals",

abstract = "Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interface morphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.",

author = "Xinbo Yang and K. Fujiwara and Abrosimov, {N. V.} and R. Gotoh and J. Nozawa and H. Koizumi and A. Kwasniewski and S. Uda",

note = "Funding Information: Xinbo Yang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for financial support. This work was partially funded by the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers.”",

year = "2012",

month = apr,

day = "2",

doi = "10.1063/1.3698336",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "14",

}

TY - JOUR

T1 - The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

AU - Yang, Xinbo

AU - Fujiwara, K.

AU - Abrosimov, N. V.

AU - Gotoh, R.

AU - Nozawa, J.

AU - Koizumi, H.

AU - Kwasniewski, A.

AU - Uda, S.

N1 - Funding Information: Xinbo Yang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for financial support. This work was partially funded by the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers.”

PY - 2012/4/2

Y1 - 2012/4/2

N2 - Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interface morphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.

AB - Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interface morphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.

UR - http://www.scopus.com/inward/record.url?scp=84859804953&partnerID=8YFLogxK

U2 - 10.1063/1.3698336

DO - 10.1063/1.3698336

M3 - Article

AN - SCOPUS:84859804953

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141601

ER -

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this