Temperature-induced ion kinetic energy relaxation and yield of H- dissociative electron attachment from hydrogenated diamond films

A. Hoffman, S. Ustaze, M. Hadj Hamou, M. N. Hedhili, Y. Le Coat, R. Azria, M. Tronc

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    In this paper, we report on the influence of surface temperature on low-energy H- electron stimulated desorption occurring via dissociative electron attachment from hydrogenated diamond films. By measuring the H- kinetic energy distribution (KED) induced by electron bombardment in the 7-18 eV range for surface temperatures ranging between 100 and 450 K, we investigate the dynamics of the desorption process. It is determined that the H- ion yield continuously decreases with increasing temperature and that the most probable H- kinetic energy shifts to lower energies. It is proposed that the effect of temperature on the H-, KED and consequently, on the reduction in ion yield is predominantly due to an increase in the energy relaxation of the anion resonance and energy losses of the outgoing H- ion through interactions with the solid's multiphonon background and collisions.

    Original languageEnglish (US)
    Article number245404
    Pages (from-to)2454041-2454045
    Number of pages5
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Issue number24
    StatePublished - 2001

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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