Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser

S. M. Mitani; M. S. Alias; M. R. Yahya; A. F A Mat

doi:10.1109/ISIE.2009.5214083

Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser

S. M. Mitani, M. S. Alias, M. R. Yahya, A. F A Mat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We report the design, growth and characterization of GaInNAs/GaAs semiconductor laser operating at 1.3 μm. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. The gain properties and threshold current of GaInNAs/GaAs quantum well structures at various temperatures are numerically investigated. The results measurements show that the GaInNAs/GaAs has a lower transparency carrier density compared to the conventional InGaAsP/InP quantum well structures for 1.3 μm semiconductor laser. The material gain at various temperatures and radiative current density as a function of quantum well and barrier are determined.

Original language	English (US)
Title of host publication	Proceedings - IEEE ISIE 2009, IEEE International Symposium on Industrial Electronics
Pages	2208-2211
Number of pages	4
DOIs	https://doi.org/10.1109/ISIE.2009.5214083
State	Published - 2009
Externally published	Yes
Event	IEEE International Symposium on Industrial Electronics, IEEE ISIE 2009 - Seoul, Korea, Republic of Duration: Jul 5 2009 → Jul 8 2009

Other

Other	IEEE International Symposium on Industrial Electronics, IEEE ISIE 2009
Country/Territory	Korea, Republic of
City	Seoul
Period	07/5/09 → 07/8/09

Keywords

GaInNAs
Long wavelength VCSELs
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering

Access to Document

10.1109/ISIE.2009.5214083

Cite this

@inproceedings{0925be3188084a9e80711ec816d02aa0,

title = "Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser",

abstract = "We report the design, growth and characterization of GaInNAs/GaAs semiconductor laser operating at 1.3 μm. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. The gain properties and threshold current of GaInNAs/GaAs quantum well structures at various temperatures are numerically investigated. The results measurements show that the GaInNAs/GaAs has a lower transparency carrier density compared to the conventional InGaAsP/InP quantum well structures for 1.3 μm semiconductor laser. The material gain at various temperatures and radiative current density as a function of quantum well and barrier are determined.",

keywords = "GaInNAs, Long wavelength VCSELs, Semiconductor lasers",

author = "Mitani, {S. M.} and Alias, {M. S.} and Yahya, {M. R.} and Mat, {A. F A}",

year = "2009",

doi = "10.1109/ISIE.2009.5214083",

language = "English (US)",

isbn = "9781424443499",

pages = "2208--2211",

booktitle = "Proceedings - IEEE ISIE 2009, IEEE International Symposium on Industrial Electronics",

note = "IEEE International Symposium on Industrial Electronics, IEEE ISIE 2009 ; Conference date: 05-07-2009 Through 08-07-2009",

}

Mitani, SM, Alias, MS, Yahya, MR & Mat, AFA 2009, Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser. in Proceedings - IEEE ISIE 2009, IEEE International Symposium on Industrial Electronics., 5214083, pp. 2208-2211, IEEE International Symposium on Industrial Electronics, IEEE ISIE 2009, Seoul, Korea, Republic of, 07/5/09. https://doi.org/10.1109/ISIE.2009.5214083

TY - GEN

T1 - Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser

AU - Mitani, S. M.

AU - Alias, M. S.

AU - Yahya, M. R.

AU - Mat, A. F A

PY - 2009

Y1 - 2009

N2 - We report the design, growth and characterization of GaInNAs/GaAs semiconductor laser operating at 1.3 μm. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. The gain properties and threshold current of GaInNAs/GaAs quantum well structures at various temperatures are numerically investigated. The results measurements show that the GaInNAs/GaAs has a lower transparency carrier density compared to the conventional InGaAsP/InP quantum well structures for 1.3 μm semiconductor laser. The material gain at various temperatures and radiative current density as a function of quantum well and barrier are determined.

AB - We report the design, growth and characterization of GaInNAs/GaAs semiconductor laser operating at 1.3 μm. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. The gain properties and threshold current of GaInNAs/GaAs quantum well structures at various temperatures are numerically investigated. The results measurements show that the GaInNAs/GaAs has a lower transparency carrier density compared to the conventional InGaAsP/InP quantum well structures for 1.3 μm semiconductor laser. The material gain at various temperatures and radiative current density as a function of quantum well and barrier are determined.

KW - GaInNAs

KW - Long wavelength VCSELs

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=77950100247&partnerID=8YFLogxK

U2 - 10.1109/ISIE.2009.5214083

DO - 10.1109/ISIE.2009.5214083

M3 - Conference contribution

AN - SCOPUS:77950100247

SN - 9781424443499

SP - 2208

EP - 2211

BT - Proceedings - IEEE ISIE 2009, IEEE International Symposium on Industrial Electronics

T2 - IEEE International Symposium on Industrial Electronics, IEEE ISIE 2009

Y2 - 5 July 2009 through 8 July 2009

ER -

Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser

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Keywords

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