Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama; Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1002/pssc.200983863

Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	2419-2422
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200983863
State	Published - Oct 1 2010
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate",

abstract = "We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. {\textcopyright} 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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T1 - Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

AU - Sugiyama, Takayuki

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2010/10/1

Y1 - 2010/10/1

N2 - We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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M3 - Article

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

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IS - 10

ER -

Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Abstract

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