Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)2419-2422
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number10
DOIs
StatePublished - Oct 1 2010
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Condensed Matter Physics

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