Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Yating Wan; Qiang Li; Alan Y. Liu; Arthur C. Gossard; John E. Bowers; Evelyn L. Hu; Kei May Lau

doi:10.1063/1.4955456

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Yating Wan, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature To of 105 K has been extracted.

Original language	English (US)
Journal	Applied Physics Letters
Volume	109
Issue number	1
DOIs	https://doi.org/10.1063/1.4955456
State	Published - Jul 4 2016
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources",

abstract = "Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature To of 105 K has been extracted.",

author = "Yating Wan and Qiang Li and Liu, {Alan Y.} and Gossard, {Arthur C.} and Bowers, {John E.} and Hu, {Evelyn L.} and Lau, {Kei May}",

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doi = "10.1063/1.4955456",

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AU - Wan, Yating

AU - Li, Qiang

AU - Liu, Alan Y.

AU - Gossard, Arthur C.

AU - Bowers, John E.

AU - Hu, Evelyn L.

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2016/7/4

Y1 - 2016/7/4

N2 - Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature To of 105 K has been extracted.

AB - Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature To of 105 K has been extracted.

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Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Abstract

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