TEM characterization of nickel silicide process

K. Li; E. Eddie; S. P. Zhao

doi:10.1109/SMELEC.2006.380707

TEM characterization of nickel silicide process

K. Li^*, E. Eddie, S. P. Zhao

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The advent of 65 nm technology makes nickel silicide finally come into the picture due to its relatively low electrical resistance and less silicon consumption. To accurately control the nickel silicide thickness and obtain the low resistance mono-silicide (N_iS_i) phase, characterization of each sicilidation process step is very important. This paper applies analytical TEM to characterize the nickel silicidation process. Different imaging technologies are compared and the results show that Z-contrast STEM imaging is a very good technique for the identification of different compositional layers and imaging processing also plays a very important role for image quality improvement.

Original language	English (US)
Title of host publication	ICSE 2006
Subtitle of host publication	2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	622-625
Number of pages	4
DOIs	https://doi.org/10.1109/SMELEC.2006.380707
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: Nov 29 2006 → Dec 1 2006

Other

Other	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/Territory	Malaysia
City	Kuala Lumpur
Period	11/29/06 → 12/1/06

ASJC Scopus subject areas

Engineering(all)

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10.1109/SMELEC.2006.380707

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title = "TEM characterization of nickel silicide process",

abstract = "The advent of 65 nm technology makes nickel silicide finally come into the picture due to its relatively low electrical resistance and less silicon consumption. To accurately control the nickel silicide thickness and obtain the low resistance mono-silicide (NiSi) phase, characterization of each sicilidation process step is very important. This paper applies analytical TEM to characterize the nickel silicidation process. Different imaging technologies are compared and the results show that Z-contrast STEM imaging is a very good technique for the identification of different compositional layers and imaging processing also plays a very important role for image quality improvement.",

author = "K. Li and E. Eddie and Zhao, {S. P.}",

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AU - Eddie, E.

AU - Zhao, S. P.

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N2 - The advent of 65 nm technology makes nickel silicide finally come into the picture due to its relatively low electrical resistance and less silicon consumption. To accurately control the nickel silicide thickness and obtain the low resistance mono-silicide (NiSi) phase, characterization of each sicilidation process step is very important. This paper applies analytical TEM to characterize the nickel silicidation process. Different imaging technologies are compared and the results show that Z-contrast STEM imaging is a very good technique for the identification of different compositional layers and imaging processing also plays a very important role for image quality improvement.

AB - The advent of 65 nm technology makes nickel silicide finally come into the picture due to its relatively low electrical resistance and less silicon consumption. To accurately control the nickel silicide thickness and obtain the low resistance mono-silicide (NiSi) phase, characterization of each sicilidation process step is very important. This paper applies analytical TEM to characterize the nickel silicidation process. Different imaging technologies are compared and the results show that Z-contrast STEM imaging is a very good technique for the identification of different compositional layers and imaging processing also plays a very important role for image quality improvement.

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DO - 10.1109/SMELEC.2006.380707

M3 - Conference contribution

AN - SCOPUS:35148843022

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BT - ICSE 2006

T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006

Y2 - 29 November 2006 through 1 December 2006

ER -

TEM characterization of nickel silicide process

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