Abstract
The advent of 65 nm technology makes nickel silicide finally come into the picture due to its relatively low electrical resistance and less silicon consumption. To accurately control the nickel silicide thickness and obtain the low resistance mono-silicide (NiSi) phase, characterization of each sicilidation process step is very important. This paper applies analytical TEM to characterize the nickel silicidation process. Different imaging technologies are compared and the results show that Z-contrast STEM imaging is a very good technique for the identification of different compositional layers and imaging processing also plays a very important role for image quality improvement.
Original language | English (US) |
---|---|
Title of host publication | ICSE 2006 |
Subtitle of host publication | 2006 IEEE International Conference on Semiconductor Electronics, Proceedings |
Pages | 622-625 |
Number of pages | 4 |
DOIs | |
State | Published - 2006 |
Externally published | Yes |
Event | 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: Nov 29 2006 → Dec 1 2006 |
Other
Other | 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 |
---|---|
Country/Territory | Malaysia |
City | Kuala Lumpur |
Period | 11/29/06 → 12/1/06 |
ASJC Scopus subject areas
- Engineering(all)