TEM application in the failure analysis of advanced 90 nm SOI-based IC devices

K. Li; E. Er; S. Zhao

doi:10.1109/IPFA.2006.251031

TEM application in the failure analysis of advanced 90 nm SOI-based IC devices

K. Li^*, E. Er, S. Zhao

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The adoption of SOI structure into 90 nm IC devices makes the characterization very challenging. TEM characterization becomes more critical, challenging and indispensable in the failure analysis of such devices. To illustrate the application of TEM in this area, several unique examples including both cross-sectional and planar analysis are given here.

Original language	English (US)
Title of host publication	Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages	205-208
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2006.251031
State	Published - 2006
Externally published	Yes
Event	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore Duration: Jul 3 2006 → Jul 7 2006

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Other

Other	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Country/Territory	Singapore
City	Singapore
Period	07/3/06 → 07/7/06

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IPFA.2006.251031

Cite this

Li, K., Er, E., & Zhao, S. (2006). TEM application in the failure analysis of advanced 90 nm SOI-based IC devices. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (pp. 205-208). Article 4017056 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.251031

@inproceedings{4c2fa3608c54440badb4a98c8b7d3255,

title = "TEM application in the failure analysis of advanced 90 nm SOI-based IC devices",

abstract = "The adoption of SOI structure into 90 nm IC devices makes the characterization very challenging. TEM characterization becomes more critical, challenging and indispensable in the failure analysis of such devices. To illustrate the application of TEM in this area, several unique examples including both cross-sectional and planar analysis are given here.",

author = "K. Li and E. Er and S. Zhao",

year = "2006",

doi = "10.1109/IPFA.2006.251031",

language = "English (US)",

isbn = "1424402069",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "205--208",

booktitle = "Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006",

note = "13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 ; Conference date: 03-07-2006 Through 07-07-2006",

}

Li, K, Er, E & Zhao, S 2006, TEM application in the failure analysis of advanced 90 nm SOI-based IC devices. in Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006., 4017056, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 205-208, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006, Singapore, Singapore, 07/3/06. https://doi.org/10.1109/IPFA.2006.251031

TEM application in the failure analysis of advanced 90 nm SOI-based IC devices. / Li, K.; Er, E.; Zhao, S.
Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 205-208 4017056 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - TEM application in the failure analysis of advanced 90 nm SOI-based IC devices

AU - Li, K.

AU - Er, E.

AU - Zhao, S.

PY - 2006

Y1 - 2006

N2 - The adoption of SOI structure into 90 nm IC devices makes the characterization very challenging. TEM characterization becomes more critical, challenging and indispensable in the failure analysis of such devices. To illustrate the application of TEM in this area, several unique examples including both cross-sectional and planar analysis are given here.

AB - The adoption of SOI structure into 90 nm IC devices makes the characterization very challenging. TEM characterization becomes more critical, challenging and indispensable in the failure analysis of such devices. To illustrate the application of TEM in this area, several unique examples including both cross-sectional and planar analysis are given here.

UR - http://www.scopus.com/inward/record.url?scp=34250656224&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2006.251031

DO - 10.1109/IPFA.2006.251031

M3 - Conference contribution

AN - SCOPUS:34250656224

SN - 1424402069

SN - 9781424402069

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 205

EP - 208

BT - Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

T2 - 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

Y2 - 3 July 2006 through 7 July 2006

ER -

Li K, Er E, Zhao S. TEM application in the failure analysis of advanced 90 nm SOI-based IC devices. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 205-208. 4017056. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2006.251031

TEM application in the failure analysis of advanced 90 nm SOI-based IC devices

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this