TDDB Reliability Improvement of Cu Damascene with a Bilayer-Structured α-SiC:H Dielectric Barrier

Chiu Chih Chiang*, Mao Chieh Chen, Zhen Cheng Wu, Lain Jong Li, Syun Ming Jang, Chen Hua Yu, Mong Song Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


This work investigates the thermal stability and physical and barrier characteristics of two species of amorphous silicon carbide dielectric films: The nitrogen-containing α-SiCN film with a dielectric constant of 4.9 and the nitrogen-free α-SiC film with a dielectric constant of 3.8. The time-dependent-dielectric-breakdown (TDDB) lifetime of the Cu damascene metallization structure is greatly improved by using an α-SiCN/ α-SiC bilayer dielectric stack as the barrier layer. This improvement is attributed to the lower leakage current of α-SiC, absence of nitridation on the Cu surface, and better adhesion of α-SiC on Cu and organosilicate glass intermetal dielectric. Although the α-SiC film has a very low deposition rate, the α-SiCN/α-SiC bilayer dielectric is a favorable combination for the barrier layer because α-SiCN can protect α-SiC from plasma attack, such as O2 plasma attack during photoresist stripping and organosilicate plasma attack during organosilicate glass deposition.

Original languageEnglish (US)
Pages (from-to)G89-G92
Issue number2
StatePublished - 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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