Tapping mode microwave impedance microscopy

K. Lai, W. Kundhikanjana, H. Peng, Y. Cui, M. A. Kelly, Z. X. Shen

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


We report tapping mode microwave impedance imaging based on atomic force microscope platforms. The shielded cantilever probe is critical to localize the tip-sample interaction near the tip apex. The modulated tip-sample impedance can be accurately simulated by the finite-element analysis and the result agrees quantitatively to the experimental data on a series of thin-film dielectric samples. The tapping mode microwave imaging is also superior to the contact mode in that the thermal drift in a long time scale is totally eliminated and an absolute measurement on the dielectric properties is possible. We demonstrated tapping images on working nanodevices, and the data are consistent with the transport results. © 2009 American Institute of Physics.
Original languageEnglish (US)
Pages (from-to)043707
JournalReview of Scientific Instruments
Issue number4
StatePublished - Apr 27 2009
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-F1-033-02
Acknowledgements: The research is funded by Center of Probing the Nanoscale (CPN), Stanford University, a gift grant of Agilent Technologies, Inc., and DOE under Contract Nos. DE-FG03-01ER45929-A001 and DE-FG36-08GOI8004. This publication is also based on work supported by Award No. KUS-F1-033-02, made by King Abdullah University of Science and Technology (KAUST) under the global research partnership (GRP) program. CPN is an NSF NSEC, NSF Grant No. PHY-0425897. The cantilevers were fabricated in Stanford Nanofabrication Facility (SNF) by A. M. Fitzgerald and B. Chui in A. M. Fitzgerald & Associates, LLC, San Carlos, CA.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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