Abstract
We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one.
Original language | English (US) |
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Article number | 073902 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 7 |
DOIs | |
State | Published - Feb 16 2015 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2015 AIP Publishing LLC.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)