Tailoring magnetoresistance at the atomic level: An ab initio study

Kun Tao; V. S. Stepanyuk; I. Rungger; S. Sanvito

doi:10.1103/PhysRevB.85.045406

Tailoring magnetoresistance at the atomic level: An ab initio study

Kun Tao, V. S. Stepanyuk, I. Rungger, S. Sanvito

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

Original language	English (US)
Journal	Physical Review B
Volume	85
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.85.045406
State	Published - Jan 5 2012
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: SS and IR acknowledge the Science Foundation Ireland (Grant No. 07/IN.1/I945) and the King Abdullah University of Science and Technology (ACRAB project).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1103/PhysRevB.85.045406

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title = "Tailoring magnetoresistance at the atomic level: An ab initio study",

abstract = "The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. {\textcopyright} 2012 American Physical Society.",

author = "Kun Tao and Stepanyuk, {V. S.} and I. Rungger and S. Sanvito",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: SS and IR acknowledge the Science Foundation Ireland (Grant No. 07/IN.1/I945) and the King Abdullah University of Science and Technology (ACRAB project). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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AU - Tao, Kun

AU - Stepanyuk, V. S.

AU - Rungger, I.

AU - Sanvito, S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: SS and IR acknowledge the Science Foundation Ireland (Grant No. 07/IN.1/I945) and the King Abdullah University of Science and Technology (ACRAB project). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2012/1/5

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N2 - The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

AB - The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

UR - http://hdl.handle.net/10754/599861

UR - https://link.aps.org/doi/10.1103/PhysRevB.85.045406

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DO - 10.1103/PhysRevB.85.045406

M3 - Article

SN - 1098-0121

VL - 85

JO - Physical Review B

JF - Physical Review B

IS - 4

ER -

Tailoring magnetoresistance at the atomic level: An ab initio study

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