Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin

Wei Ting Hsu, Bo Han Lin, Li Syuan Lu, Ming Hao Lee, Ming Wen Chu, Lain-Jong Li, Wang Yao, Wen-Hao Chang, Chih Kang Shih

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

Excitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species–dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer.
Original languageEnglish (US)
Pages (from-to)eaax7407
JournalScience advances
Volume5
Issue number12
DOIs
StatePublished - Dec 20 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This research was supported by grants from the Welch Foundation (F-1672), the NSF (DMR-1808751), the NSF MRSEC program (DMR-1720595), and the U.S. Air Force (FA2386-18-1-4097). W.-T.H. acknowledges the support from the Ministry of Science and Technology of Taiwan (MOST-107-2917-I-564-010). W.-H.C. acknowledges the support from the Ministry of Science and Technology of Taiwan (MOST-105-2119-M-009-014-MY3 and MOST-107-2112-M-009-024-MY3). W.Y. acknowledges the support from the Research Grants Council of HKSAR (HKU17312916).

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