Systematic study of metal-insulator-metal diodes with a native oxide

E. Donchev, P. M. Gammon, J. S. Pang, P. K. Petrov, N. McN. Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution


© 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.
Original languageEnglish (US)
Title of host publicationThin Films for Solar and Energy Technology VI
PublisherSPIE-Intl Soc Optical Eng
ISBN (Print)9781628412048
StatePublished - Oct 7 2014
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by EPSRC grant number EP/G060940/1. Evgeniy Donchev would like to acknowledgethe financial support provided by the Armourers & Brasiers' Gauntlet Trust. Peter Gammon would like togratefully acknowledge the financial support from the Royal Academy of Engineering. J. S. Pang and P. K. Petrovacknowledge the financial support under the King Abdullah University for Science and Technology (KAUST)Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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