Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists

Jing Jiang; Mufei Yu; Ben Zhang; Mark Neisser; Jun Sung Chun; Emmanuel P. Giannelis; Christopher K. Ober

doi:10.1117/12.2084896

Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists

Jing Jiang, Mufei Yu, Ben Zhang, Mark Neisser, Jun Sung Chun, Emmanuel P. Giannelis, Christopher K. Ober

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Ligand stabilized metal oxide nanoparticle resists are promising candidates for EUV lithography due to their high sensitivity for high-resolution patterning and high etching resistance. As ligand exchange is responsible for the patterning mechanism, we systematically studied the influence of ligand structures of metal oxide EUV nanoparticles on their sensitivity and dissolution behavior. ZrO2 nanoparticles were protected with various aromatic ligands with electron withdrawing and electron donating groups. These nanoparticles have lower sensitivity compared to those with aliphatic ligands suggesting the structures of these ligands is more important than their pka on resist sensitivity. The influence of ligand structure was further studied by comparing the nanoparticles’ solubility for a single type ligand to mixtures of ligands. The mixture of nanoparticles showed improved pattern quality. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Original language	English (US)
Title of host publication	Extreme Ultraviolet (EUV) Lithography VI
Publisher	SPIE-Intl Soc Optical Eng
ISBN (Print)	9781628415247
DOIs	https://doi.org/10.1117/12.2084896
State	Published - Mar 19 2015
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors gratefully acknowledge international SEMATECH for funding. We thank the Lawrence Berkeley NationalLaboratory (LBNL), the Cornell Nanoscale Science and Technology Facility (CNF), the Cornell Center for MaterialsResearch (CCMR) and the KAUST-Cornell Center for Energy and Sustainability (KAUST-CU) for use of theirfacilities.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists",

abstract = "Ligand stabilized metal oxide nanoparticle resists are promising candidates for EUV lithography due to their high sensitivity for high-resolution patterning and high etching resistance. As ligand exchange is responsible for the patterning mechanism, we systematically studied the influence of ligand structures of metal oxide EUV nanoparticles on their sensitivity and dissolution behavior. ZrO2 nanoparticles were protected with various aromatic ligands with electron withdrawing and electron donating groups. These nanoparticles have lower sensitivity compared to those with aliphatic ligands suggesting the structures of these ligands is more important than their pka on resist sensitivity. The influence of ligand structure was further studied by comparing the nanoparticles{\textquoteright} solubility for a single type ligand to mixtures of ligands. The mixture of nanoparticles showed improved pattern quality. {\textcopyright} (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.",

author = "Jing Jiang and Mufei Yu and Ben Zhang and Mark Neisser and Chun, {Jun Sung} and Giannelis, {Emmanuel P.} and Ober, {Christopher K.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge international SEMATECH for funding. We thank the Lawrence Berkeley NationalLaboratory (LBNL), the Cornell Nanoscale Science and Technology Facility (CNF), the Cornell Center for MaterialsResearch (CCMR) and the KAUST-Cornell Center for Energy and Sustainability (KAUST-CU) for use of theirfacilities. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2015",

month = mar,

day = "19",

doi = "10.1117/12.2084896",

language = "English (US)",

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T1 - Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists

AU - Jiang, Jing

AU - Yu, Mufei

AU - Zhang, Ben

AU - Neisser, Mark

AU - Chun, Jun Sung

AU - Giannelis, Emmanuel P.

AU - Ober, Christopher K.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge international SEMATECH for funding. We thank the Lawrence Berkeley NationalLaboratory (LBNL), the Cornell Nanoscale Science and Technology Facility (CNF), the Cornell Center for MaterialsResearch (CCMR) and the KAUST-Cornell Center for Energy and Sustainability (KAUST-CU) for use of theirfacilities. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2015/3/19

Y1 - 2015/3/19

N2 - Ligand stabilized metal oxide nanoparticle resists are promising candidates for EUV lithography due to their high sensitivity for high-resolution patterning and high etching resistance. As ligand exchange is responsible for the patterning mechanism, we systematically studied the influence of ligand structures of metal oxide EUV nanoparticles on their sensitivity and dissolution behavior. ZrO2 nanoparticles were protected with various aromatic ligands with electron withdrawing and electron donating groups. These nanoparticles have lower sensitivity compared to those with aliphatic ligands suggesting the structures of these ligands is more important than their pka on resist sensitivity. The influence of ligand structure was further studied by comparing the nanoparticles’ solubility for a single type ligand to mixtures of ligands. The mixture of nanoparticles showed improved pattern quality. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

AB - Ligand stabilized metal oxide nanoparticle resists are promising candidates for EUV lithography due to their high sensitivity for high-resolution patterning and high etching resistance. As ligand exchange is responsible for the patterning mechanism, we systematically studied the influence of ligand structures of metal oxide EUV nanoparticles on their sensitivity and dissolution behavior. ZrO2 nanoparticles were protected with various aromatic ligands with electron withdrawing and electron donating groups. These nanoparticles have lower sensitivity compared to those with aliphatic ligands suggesting the structures of these ligands is more important than their pka on resist sensitivity. The influence of ligand structure was further studied by comparing the nanoparticles’ solubility for a single type ligand to mixtures of ligands. The mixture of nanoparticles showed improved pattern quality. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

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UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2084896

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U2 - 10.1117/12.2084896

DO - 10.1117/12.2084896

M3 - Conference contribution

SN - 9781628415247

BT - Extreme Ultraviolet (EUV) Lithography VI

PB - SPIE-Intl Soc Optical Eng

ER -

Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists

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