The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: We thank Angstrom Engineering and Innovative Technology for useful discussions regarding material deposition methods and control of glovebox environment, respectively. The authors would like to acknowledge the technical assistance and scientific guidance of E. Palmiano, R. Wolowiec, and D. Kopilovic. This publication is based on part of work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D. Zhitomirsky acknowledges the financial support through the NSERC CGS D Scholarship.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.