Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels

Jiaqiang Li; Zhicheng Zhang; Ya Kong; Binwei Yao; Chen Yin; Lianming Tong; Xudong Chen; Tongbu Lu; Jin Zhang

doi:10.1016/j.chempr.2021.01.021

Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels

Jiaqiang Li, Zhicheng Zhang, Ya Kong, Binwei Yao, Chen Yin, Lianming Tong, Xudong Chen, Tongbu Lu, Jin Zhang

King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Two-dimensional (2D) graphdiyne (GDY) is a promising floating-gate material for flexible optoelectronic flash memory owing to its fascinating electrical and optical properties. However, research in GDY-based flash memory is still in its infancy owing to the huge challenge in the synthesis of large-area and ultrathin GDY films with high quality and uniformity. Here, an electric double-layer-confined strategy is proposed to synthesize a wafer-scale GDY film with thickness of 1 nm. Then, a two-terminal top-floating-gated optoelectronic memory with multibit storage capability is investigated using GDY as a photoresponsive top-floating gate. Benefiting from the excellent charge storage capability and high photoresponse of GDY, this device exhibits over 256 distinct storage levels (8 bits) with signal-to-noise ratios larger than 100. Moreover, the fully 2D material and two-terminal architecture endows the device with robust bending stability for over 1,000 bending circles, paving the way to develop wearable electronics.

Original language	English (US)
Journal	Chem
DOIs	https://doi.org/10.1016/j.chempr.2021.01.021
State	Published - Feb 26 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-04-06
Acknowledgements: We thank L.X. Zhong, J.L. Du, C.G. Chen, and C.W. Tan for helpful discussions. This work was financially supported by the Beijing National Laboratory for Molecular Sciences (BNLMS-CXTD-202001), the Ministry of Science and Technology of China (2016YFA0200100 and 2018YFA0703502), the National Natural Science Foundation of China (grant nos. 52021006, 51720105003, 21790052, 51802220, and 21974004), and the Natural Science Foundation of Tianjin City (19JCYBJC17300). J.Z. X.C. and J.L. designed the project. J.Z. T.L. and X.C. supervised the project. J.L. synthesized the few-layered GDY film. X.C. and Z.Z. constructed the devices and performed the electrical measurements. J.L. and X.C. performed the characterizations and wrote the manuscript. All authors discussed the results and contributed to the interpretation of data and contributed to editing the manuscript. The authors declare no competing interests.

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10.1016/j.chempr.2021.01.021

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@article{40463d029c9e4ce59c4bc14d71eb5c0f,

title = "Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels",

abstract = "Two-dimensional (2D) graphdiyne (GDY) is a promising floating-gate material for flexible optoelectronic flash memory owing to its fascinating electrical and optical properties. However, research in GDY-based flash memory is still in its infancy owing to the huge challenge in the synthesis of large-area and ultrathin GDY films with high quality and uniformity. Here, an electric double-layer-confined strategy is proposed to synthesize a wafer-scale GDY film with thickness of 1 nm. Then, a two-terminal top-floating-gated optoelectronic memory with multibit storage capability is investigated using GDY as a photoresponsive top-floating gate. Benefiting from the excellent charge storage capability and high photoresponse of GDY, this device exhibits over 256 distinct storage levels (8 bits) with signal-to-noise ratios larger than 100. Moreover, the fully 2D material and two-terminal architecture endows the device with robust bending stability for over 1,000 bending circles, paving the way to develop wearable electronics.",

author = "Jiaqiang Li and Zhicheng Zhang and Ya Kong and Binwei Yao and Chen Yin and Lianming Tong and Xudong Chen and Tongbu Lu and Jin Zhang",

note = "KAUST Repository Item: Exported on 2021-04-06 Acknowledgements: We thank L.X. Zhong, J.L. Du, C.G. Chen, and C.W. Tan for helpful discussions. This work was financially supported by the Beijing National Laboratory for Molecular Sciences (BNLMS-CXTD-202001), the Ministry of Science and Technology of China (2016YFA0200100 and 2018YFA0703502), the National Natural Science Foundation of China (grant nos. 52021006, 51720105003, 21790052, 51802220, and 21974004), and the Natural Science Foundation of Tianjin City (19JCYBJC17300). J.Z. X.C. and J.L. designed the project. J.Z. T.L. and X.C. supervised the project. J.L. synthesized the few-layered GDY film. X.C. and Z.Z. constructed the devices and performed the electrical measurements. J.L. and X.C. performed the characterizations and wrote the manuscript. All authors discussed the results and contributed to the interpretation of data and contributed to editing the manuscript. The authors declare no competing interests.",

year = "2021",

month = feb,

day = "26",

doi = "10.1016/j.chempr.2021.01.021",

language = "English (US)",

journal = "Chem",

issn = "2451-9294",

publisher = "Elsevier",

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T1 - Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels

AU - Li, Jiaqiang

AU - Zhang, Zhicheng

AU - Kong, Ya

AU - Yao, Binwei

AU - Yin, Chen

AU - Tong, Lianming

AU - Chen, Xudong

AU - Lu, Tongbu

AU - Zhang, Jin

N1 - KAUST Repository Item: Exported on 2021-04-06 Acknowledgements: We thank L.X. Zhong, J.L. Du, C.G. Chen, and C.W. Tan for helpful discussions. This work was financially supported by the Beijing National Laboratory for Molecular Sciences (BNLMS-CXTD-202001), the Ministry of Science and Technology of China (2016YFA0200100 and 2018YFA0703502), the National Natural Science Foundation of China (grant nos. 52021006, 51720105003, 21790052, 51802220, and 21974004), and the Natural Science Foundation of Tianjin City (19JCYBJC17300). J.Z. X.C. and J.L. designed the project. J.Z. T.L. and X.C. supervised the project. J.L. synthesized the few-layered GDY film. X.C. and Z.Z. constructed the devices and performed the electrical measurements. J.L. and X.C. performed the characterizations and wrote the manuscript. All authors discussed the results and contributed to the interpretation of data and contributed to editing the manuscript. The authors declare no competing interests.

PY - 2021/2/26

Y1 - 2021/2/26

N2 - Two-dimensional (2D) graphdiyne (GDY) is a promising floating-gate material for flexible optoelectronic flash memory owing to its fascinating electrical and optical properties. However, research in GDY-based flash memory is still in its infancy owing to the huge challenge in the synthesis of large-area and ultrathin GDY films with high quality and uniformity. Here, an electric double-layer-confined strategy is proposed to synthesize a wafer-scale GDY film with thickness of 1 nm. Then, a two-terminal top-floating-gated optoelectronic memory with multibit storage capability is investigated using GDY as a photoresponsive top-floating gate. Benefiting from the excellent charge storage capability and high photoresponse of GDY, this device exhibits over 256 distinct storage levels (8 bits) with signal-to-noise ratios larger than 100. Moreover, the fully 2D material and two-terminal architecture endows the device with robust bending stability for over 1,000 bending circles, paving the way to develop wearable electronics.

AB - Two-dimensional (2D) graphdiyne (GDY) is a promising floating-gate material for flexible optoelectronic flash memory owing to its fascinating electrical and optical properties. However, research in GDY-based flash memory is still in its infancy owing to the huge challenge in the synthesis of large-area and ultrathin GDY films with high quality and uniformity. Here, an electric double-layer-confined strategy is proposed to synthesize a wafer-scale GDY film with thickness of 1 nm. Then, a two-terminal top-floating-gated optoelectronic memory with multibit storage capability is investigated using GDY as a photoresponsive top-floating gate. Benefiting from the excellent charge storage capability and high photoresponse of GDY, this device exhibits over 256 distinct storage levels (8 bits) with signal-to-noise ratios larger than 100. Moreover, the fully 2D material and two-terminal architecture endows the device with robust bending stability for over 1,000 bending circles, paving the way to develop wearable electronics.

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UR - https://linkinghub.elsevier.com/retrieve/pii/S2451929421000504

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U2 - 10.1016/j.chempr.2021.01.021

DO - 10.1016/j.chempr.2021.01.021

M3 - Article

SN - 2451-9294

JO - Chem

JF - Chem

ER -

Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels

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