Synthesis of taperlike Si nanowires with strong field emission

Y. L. Chueh; L. J. Chou; S. L. Cheng; J. H. He; W. W. Wu; L. J. Chen

doi:10.1063/1.1883316

Synthesis of taperlike Si nanowires with strong field emission

Y. L. Chueh^*, L. J. Chou, S. L. Cheng, J. H. He, W. W. Wu, L. J. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001) Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 Vμm and a threshold field of 9-10 Vμm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires.

Original language	English (US)
Article number	133112
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	13
DOIs	https://doi.org/10.1063/1.1883316
State	Published - Mar 28 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Synthesis of taperlike Si nanowires with strong field emission",

abstract = "Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001) Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 Vμm and a threshold field of 9-10 Vμm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires.",

author = "Chueh, {Y. L.} and Chou, {L. J.} and Cheng, {S. L.} and He, {J. H.} and Wu, {W. W.} and Chen, {L. J.}",

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T1 - Synthesis of taperlike Si nanowires with strong field emission

AU - Chueh, Y. L.

AU - Chou, L. J.

AU - Cheng, S. L.

AU - He, J. H.

AU - Wu, W. W.

AU - Chen, L. J.

PY - 2005/3/28

Y1 - 2005/3/28

N2 - Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001) Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 Vμm and a threshold field of 9-10 Vμm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires.

AB - Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001) Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 Vμm and a threshold field of 9-10 Vμm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires.

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Synthesis of taperlike Si nanowires with strong field emission

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