Synthesis of large-area MoS 2 atomic layers with chemical vapor deposition

Yi Hsien Lee; Xin Quan Zhang; Wenjing Zhang; Mu Tung Chang; Cheng Te Lin; Kai Di Chang; Ya Chu Yu; Jacob Tse Wei Wang; Chia Seng Chang; Lain Jong Li; Tsung Wu Lin

doi:10.1002/adma.201104798

Synthesis of large-area MoS ₂ atomic layers with chemical vapor deposition

Yi Hsien Lee, Xin Quan Zhang, Wenjing Zhang, Mu Tung Chang, Cheng Te Lin, Kai Di Chang, Ya Chu Yu, Jacob Tse Wei Wang, Chia Seng Chang, Lain Jong Li^*, Tsung Wu Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3078 Scopus citations

Abstract

Large-area MoS ₂ atomic layers are synthesized on SiO ₂ substrates by chemical vapor deposition using MoO ₃ and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS ₂ monolayer. The TEM images verify that the synthesized MoS ₂ sheets are highly crystalline.

Original language	English (US)
Pages (from-to)	2320-2325
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	17
DOIs	https://doi.org/10.1002/adma.201104798
State	Published - May 2 2012
Externally published	Yes

Keywords

chemical vapor deposition
field-effect transistors
layered materials
molybdenum disulfide

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201104798

Cite this

@article{5aa949fa99c94cc5a0d028363ea25a7f,

title = "Synthesis of large-area MoS 2 atomic layers with chemical vapor deposition",

abstract = "Large-area MoS 2 atomic layers are synthesized on SiO 2 substrates by chemical vapor deposition using MoO 3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS 2 monolayer. The TEM images verify that the synthesized MoS 2 sheets are highly crystalline.",

keywords = "chemical vapor deposition, field-effect transistors, layered materials, molybdenum disulfide",

author = "Lee, {Yi Hsien} and Zhang, {Xin Quan} and Wenjing Zhang and Chang, {Mu Tung} and Lin, {Cheng Te} and Chang, {Kai Di} and Yu, {Ya Chu} and Wang, {Jacob Tse Wei} and Chang, {Chia Seng} and Li, {Lain Jong} and Lin, {Tsung Wu}",

year = "2012",

month = may,

day = "2",

doi = "10.1002/adma.201104798",

language = "English (US)",

volume = "24",

pages = "2320--2325",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "WILEY-V C H VERLAG GMBH",

number = "17",

}

TY - JOUR

T1 - Synthesis of large-area MoS 2 atomic layers with chemical vapor deposition

AU - Lee, Yi Hsien

AU - Zhang, Xin Quan

AU - Zhang, Wenjing

AU - Chang, Mu Tung

AU - Lin, Cheng Te

AU - Chang, Kai Di

AU - Yu, Ya Chu

AU - Wang, Jacob Tse Wei

AU - Chang, Chia Seng

AU - Li, Lain Jong

AU - Lin, Tsung Wu

PY - 2012/5/2

Y1 - 2012/5/2

N2 - Large-area MoS 2 atomic layers are synthesized on SiO 2 substrates by chemical vapor deposition using MoO 3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS 2 monolayer. The TEM images verify that the synthesized MoS 2 sheets are highly crystalline.

AB - Large-area MoS 2 atomic layers are synthesized on SiO 2 substrates by chemical vapor deposition using MoO 3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS 2 monolayer. The TEM images verify that the synthesized MoS 2 sheets are highly crystalline.

KW - chemical vapor deposition

KW - field-effect transistors

KW - layered materials

KW - molybdenum disulfide

UR - http://www.scopus.com/inward/record.url?scp=84860329324&partnerID=8YFLogxK

U2 - 10.1002/adma.201104798

DO - 10.1002/adma.201104798

M3 - Article

C2 - 22467187

AN - SCOPUS:84860329324

SN - 0935-9648

VL - 24

SP - 2320

EP - 2325

JO - Advanced Materials

JF - Advanced Materials

IS - 17

ER -