Synthesis of large-area MoS 2 atomic layers with chemical vapor deposition

Yi Hsien Lee, Xin Quan Zhang, Wenjing Zhang, Mu Tung Chang, Cheng Te Lin, Kai Di Chang, Ya Chu Yu, Jacob Tse Wei Wang, Chia Seng Chang, Lain Jong Li*, Tsung Wu Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3078 Scopus citations

Abstract

Large-area MoS 2 atomic layers are synthesized on SiO 2 substrates by chemical vapor deposition using MoO 3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS 2 monolayer. The TEM images verify that the synthesized MoS 2 sheets are highly crystalline.

Original languageEnglish (US)
Pages (from-to)2320-2325
Number of pages6
JournalAdvanced Materials
Volume24
Issue number17
DOIs
StatePublished - May 2 2012
Externally publishedYes

Keywords

  • chemical vapor deposition
  • field-effect transistors
  • layered materials
  • molybdenum disulfide

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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