Abstract
Blue-light-emitting Si1-x Gex oxide nanowires have been grown on epitaxial Si0.8 Ge0.2 alloys on silicon by thermal annealing in a quartz tube furnace in N2 ambient. The photoluminescence spectrum of Si1-x Gex oxide nanostructures exhibits the blue-light emission with a peak at 415 nm, compared with the Si oxide nanowires with a peak at 470 nm. Nanowires with uncommon shapes, such as sunflowerlike and radiolarialike shape, have been observed. A field emission scanning electron microscope was used to monitor the growth of nanowires on the same patterned catalytic Au region. The growth can be understood in term of vapor-liquid-solid mechanism.
Original language | English (US) |
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Article number | 263109 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 26 |
DOIs | |
State | Published - Jun 27 2005 |
Externally published | Yes |
Bibliographical note
Funding Information:The research was supported by the Republic of China National Science Council Grant No. NSC 91-2215-E-007-002 and Ministry of Education Grant No. 91-E-FA04-1-4.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)