Synthesis of blue-light-emitting Si1-xGex oxide nanowires

J. H. He*, W. W. Wu, S. W. Lee, L. J. Chen, Y. L. Chueh, L. J. Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


Blue-light-emitting Si1-x Gex oxide nanowires have been grown on epitaxial Si0.8 Ge0.2 alloys on silicon by thermal annealing in a quartz tube furnace in N2 ambient. The photoluminescence spectrum of Si1-x Gex oxide nanostructures exhibits the blue-light emission with a peak at 415 nm, compared with the Si oxide nanowires with a peak at 470 nm. Nanowires with uncommon shapes, such as sunflowerlike and radiolarialike shape, have been observed. A field emission scanning electron microscope was used to monitor the growth of nanowires on the same patterned catalytic Au region. The growth can be understood in term of vapor-liquid-solid mechanism.

Original languageEnglish (US)
Article number263109
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - Jun 27 2005
Externally publishedYes

Bibliographical note

Funding Information:
The research was supported by the Republic of China National Science Council Grant No. NSC 91-2215-E-007-002 and Ministry of Education Grant No. 91-E-FA04-1-4.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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