Van der Waals heterostructures based on graphene and hBN layers with different stacking modes are receiving considerable attention because of their potential application in fundamental physics. However, conventional exfoliation fabrication methods and layer-by-layer transfer techniques have various limitations. The CVD synthesis of high-quality large-area graphene and hBN multilayer heterostructures is essential for the advancement of new physics. Herein, we propose an in situ CVD growth strategy for synthesizing wafer-scale AAB-stacked single-crystal graphene/hBN/graphene trilayer van der Waals heterostructures. Single-crystal CuNi(111) alloys were prepared on sapphire, followed by the pre-dissolution of carbon atoms. Single-crystal monolayer hBN was synthesized on a plasma-cleaned CuNi(111) surface. Then, a single-crystal monolayer graphene was epitaxially grown onto the hBN surface to form graphene/hBN bilayer heterostructures. A controlled decrease in the growth temperature allows the carbon atoms to precipitate out of the CuNi(111) alloy to form single-crystal graphene at the interface between hBN and CuNi(111), thereby producing graphene/hBN/graphene trilayer van der Waals heterostructures. The stacking modes between as-grown 2D layers were investigated through Raman spectroscopy and transmission electron microscopy. This study provides an in situ CVD approach to directly synthesize large-scale single-crystal low-dimensional van der Waals heterostructures and facilitates their application in future 2D-material-based integrated circuits.
|Original language||English (US)|
|State||Published - 2022|
Bibliographical noteKAUST Repository Item: Exported on 2022-05-12
Acknowledged KAUST grant number(s): OSR-2018-18 CRG7-3717
Acknowledgements: B.T. and J.L. contributed equally to this work. We thank Dr. H. Zhang, Dr. C. Chen, Dr. G. Li and Prof. Y. Han for useful discussion and suggestions. This work was supported by King Abdullah University of Science and Technology (KAUST), under award numbers: OSR-2018-18 CRG7-3717.