Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4-xTex (0.1

Yongkwan Dong; Brian Eckert; Hsin Wang; Xiaoyu Zeng; TERRY M. TRITT; George S. Nolas

doi:10.1039/c5dt00910c

Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4-xTex (0.1

Yongkwan Dong, Brian Eckert, Hsin Wang, Xiaoyu Zeng, TERRY M. TRITT, George S. Nolas

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Quaternary chalcogenides, particular compounds with the stannite structure-type, are of interest for thermoelectrics applications however tellurium-containing compositions have not been extensively investigated. We report on the synthesis and high temperature thermoelectric properties of p-type stannites Cu2.2Zn0.8SnSe4−xTex (x = 0.1, 0.2, 0.3, and 0.4). The compositions for each specimen were confirmed with a combination of Rietveld refinement and elemental analysis. Hall measurements indicate that holes are the dominant charge carriers in these materials. The electrical resistivity shows little temperature dependence up to 500 K and then increases with increasing temperature. The thermal conductivity decreases with increasing temperature with no indication of increase at higher temperatures suggesting a minimal bipolar diffusion effect in the thermal conductivity although these materials possess relatively small band-gaps as compared to that of other stannite compositions. A maximum ZT value of 0.56 was obtained at 700 K for Cu2.2Zn0.8SnSe3.7Te0.3 due to a relatively high Seebeck coefficient and low thermal conductivity.

Original language	English (US)
Pages (from-to)	9014-9019
Number of pages	6
Journal	Dalton Transactions
Volume	44
Issue number	19
DOIs	https://doi.org/10.1039/c5dt00910c
State	Published - 2015
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2021-10-15
Acknowledged KAUST grant number(s): KAUST Faculty Initiated Collaboration grant
Acknowledgements: The work was supported by the National Science Foundation grant no. DMR-1400957. H.W. would like to thank the support of the assistant secretary for Energy Efficiency and Renewable Energy of the Department of Energy and the Propulsion Materials program under the Vehicle Technologies program. Oak Ridge National Laboratory is managed by UT-Battelle LLC under contract DE-AC05000OR22725. The work in Dr Tritt's laboratory acknowledges, in a small part, the support of a KAUST Faculty Initiated Collaboration grant and also internal funding from Clemson University.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Inorganic Chemistry

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10.1039/c5dt00910c

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title = "Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4-xTex (0.1",

abstract = "Quaternary chalcogenides, particular compounds with the stannite structure-type, are of interest for thermoelectrics applications however tellurium-containing compositions have not been extensively investigated. We report on the synthesis and high temperature thermoelectric properties of p-type stannites Cu2.2Zn0.8SnSe4−xTex (x = 0.1, 0.2, 0.3, and 0.4). The compositions for each specimen were confirmed with a combination of Rietveld refinement and elemental analysis. Hall measurements indicate that holes are the dominant charge carriers in these materials. The electrical resistivity shows little temperature dependence up to 500 K and then increases with increasing temperature. The thermal conductivity decreases with increasing temperature with no indication of increase at higher temperatures suggesting a minimal bipolar diffusion effect in the thermal conductivity although these materials possess relatively small band-gaps as compared to that of other stannite compositions. A maximum ZT value of 0.56 was obtained at 700 K for Cu2.2Zn0.8SnSe3.7Te0.3 due to a relatively high Seebeck coefficient and low thermal conductivity.",

author = "Yongkwan Dong and Brian Eckert and Hsin Wang and Xiaoyu Zeng and TRITT, {TERRY M.} and Nolas, {George S.}",

note = "KAUST Repository Item: Exported on 2021-10-15 Acknowledged KAUST grant number(s): KAUST Faculty Initiated Collaboration grant Acknowledgements: The work was supported by the National Science Foundation grant no. DMR-1400957. H.W. would like to thank the support of the assistant secretary for Energy Efficiency and Renewable Energy of the Department of Energy and the Propulsion Materials program under the Vehicle Technologies program. Oak Ridge National Laboratory is managed by UT-Battelle LLC under contract DE-AC05000OR22725. The work in Dr Tritt's laboratory acknowledges, in a small part, the support of a KAUST Faculty Initiated Collaboration grant and also internal funding from Clemson University. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.1039/c5dt00910c",

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AU - Dong, Yongkwan

AU - Eckert, Brian

AU - Wang, Hsin

AU - Zeng, Xiaoyu

AU - TRITT, TERRY M.

AU - Nolas, George S.

N1 - KAUST Repository Item: Exported on 2021-10-15 Acknowledged KAUST grant number(s): KAUST Faculty Initiated Collaboration grant Acknowledgements: The work was supported by the National Science Foundation grant no. DMR-1400957. H.W. would like to thank the support of the assistant secretary for Energy Efficiency and Renewable Energy of the Department of Energy and the Propulsion Materials program under the Vehicle Technologies program. Oak Ridge National Laboratory is managed by UT-Battelle LLC under contract DE-AC05000OR22725. The work in Dr Tritt's laboratory acknowledges, in a small part, the support of a KAUST Faculty Initiated Collaboration grant and also internal funding from Clemson University. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2015

Y1 - 2015

N2 - Quaternary chalcogenides, particular compounds with the stannite structure-type, are of interest for thermoelectrics applications however tellurium-containing compositions have not been extensively investigated. We report on the synthesis and high temperature thermoelectric properties of p-type stannites Cu2.2Zn0.8SnSe4−xTex (x = 0.1, 0.2, 0.3, and 0.4). The compositions for each specimen were confirmed with a combination of Rietveld refinement and elemental analysis. Hall measurements indicate that holes are the dominant charge carriers in these materials. The electrical resistivity shows little temperature dependence up to 500 K and then increases with increasing temperature. The thermal conductivity decreases with increasing temperature with no indication of increase at higher temperatures suggesting a minimal bipolar diffusion effect in the thermal conductivity although these materials possess relatively small band-gaps as compared to that of other stannite compositions. A maximum ZT value of 0.56 was obtained at 700 K for Cu2.2Zn0.8SnSe3.7Te0.3 due to a relatively high Seebeck coefficient and low thermal conductivity.

AB - Quaternary chalcogenides, particular compounds with the stannite structure-type, are of interest for thermoelectrics applications however tellurium-containing compositions have not been extensively investigated. We report on the synthesis and high temperature thermoelectric properties of p-type stannites Cu2.2Zn0.8SnSe4−xTex (x = 0.1, 0.2, 0.3, and 0.4). The compositions for each specimen were confirmed with a combination of Rietveld refinement and elemental analysis. Hall measurements indicate that holes are the dominant charge carriers in these materials. The electrical resistivity shows little temperature dependence up to 500 K and then increases with increasing temperature. The thermal conductivity decreases with increasing temperature with no indication of increase at higher temperatures suggesting a minimal bipolar diffusion effect in the thermal conductivity although these materials possess relatively small band-gaps as compared to that of other stannite compositions. A maximum ZT value of 0.56 was obtained at 700 K for Cu2.2Zn0.8SnSe3.7Te0.3 due to a relatively high Seebeck coefficient and low thermal conductivity.

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DO - 10.1039/c5dt00910c

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ER -

Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4-xTex (0.1

Abstract

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