Ternary oxides have the potential to display better electrical and optical properties than the commonly fabricated binary oxides. In our experiments, Zn2SnO4 (ZTO) nanowires were synthesized via thermal evaporation and vapor phase transport. The opto-electrical performance of the nanowires was investigated. An individual ZTO nanowire field-effect transistor was successfully fabricated for the first time and shows an on-off ratio of 104 and transconductance of 20.6 nS, which demonstrates the promising electronic performance of ZTO nanowire in an electrical device. Field emission experiments on ZTO nanowire film also indicate their potential application as a field emission electron source.
|Original language||English (US)|
|State||Published - Nov 19 2010|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering