Synthesis and characterization of pure C40 TiSi₂

In this letter, we report on the synthesis of a third phase of Ti disilicide, the C40 TiSi₂ on Si substrate with pulsed laser annealing. This is achieved without doping the samples with foreign metals. We also show that with this C40 TiSi₂, the technologically important C54 TiSi₂ is achieved directly, completely bypassing the undesirable C49 phase. The C40 phase was identified using convergent beam electron diffraction. Raman spectrum of pure C40 TiSi₂ was also obtained. The synthesis of the C40 phase without the additional refractory metal and its promotion effect on the C54 phase formation has important implications for the integrated circuit industry in 0.13 μm technology and beyond.