Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs

David Hwang, Asad Mughal, Christopher D. Pynn, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journalArticlepeer-review

190 Scopus citations

Abstract

Ultrasmall blue InGaN micro-light-emitting diodes (μLEDs) with areas from 10-4 to 0.01 mm2 were fabricated to study their optical and electrical properties. The peak external quantum efficiencies (EQEs) of the smallest and largest μLEDs were 40.2 and 48.6%, respectively. The difference in EQE was from nonradiative recombination originating from etching damage. This decrease is less severe than that in red AlInGaP LEDs. The efficiency droop at 900 A/cm2 of the smallest μLED was 45.7%, compared with 56.0% for the largest, and was lower because of improved current spreading. These results show that ultrasmall μLEDs may be fabricated without a significant loss in optical or electrical performance.
Original languageEnglish (US)
Pages (from-to)032101
JournalApplied Physics Express
Volume10
Issue number3
DOIs
StatePublished - Feb 1 2017
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-08
Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. A portion of this work was done in the UCSB nanofabrication facility, which is part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC Program (DMR05-20415). D.H. and C.D.P. were supported by National Science Foundation Graduate Research Fellowships under Grant No. DGE-1144085. The authors would like to acknowledge Sang Ho Oh and Leah Kuritzky for assistance with device design and modeling.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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