Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

Engineering

• Surface State 100%
• Energy Dissipation 50%
• Electron Energy 50%
• Band Model 50%
• Excitation Condition 50%
• Transmissions 50%
• High Resolution 50%
• Energy Band 50%

Material Science

• Nanocrystalline Material 100%
• Photoluminescence 100%
• Epitaxy 20%
• Scanning Electron Microscopy 20%
• High-Resolution Transmission Electron Microscopy 20%
• Crystal Structure 20%

Keyphrases

• GaN Nanostructure 100%
• Energy Band Model 33%
• N-type GaN 33%
• GaN Epitaxy 33%
• Photoluminescence Mechanism 33%
• Excitation Condition 33%